High‐Performance and Low‐Power Polycrystalline MoTe 2 Thin Film Transistors with Solution‐Processed Ternary Oxide High‐k Dielectric

Yuan Liu,Xiaokun Wen,Wenyu Lei,Li Yang,Pengzhen Zhang,Yuhui Zhang,Haixin Chang,Wenfeng Zhang

DOI: https://doi.org/10.1002/admi.202101863

IF: 5.4

2022-03-07

Advanced Materials Interfaces

Abstract:Advanced Materials Interfaces, EarlyView.

materials science, multidisciplinary,chemistry

What problem does this paper attempt to address?

High‐Performance and Low‐Power Polycrystalline MoTe2 Thin Film Transistors with Solution‐Processed Ternary Oxide High‐k Dielectric

Yuan Liu,Xiaokun Wen,Wenyu Lei,Li Yang,Pengzhen Zhang,Yuhui Zhang,Haixin Chang,Wenfeng Zhang

DOI: https://doi.org/10.1002/admi.202101863

IF: 5.4

2022-01-01

Advanced Materials Interfaces

Abstract:Besides the widely investigated potential as alternative to silicon in microelectronics, semiconducting 2D transition metal dichalcogenides (TMDs) also show appealing prospects in thin film transistors (TFTs)‐based applications, while still suffer from insufficient demonstration. Herein, the authors systematically report high‐performance and low‐power chemical vapor deposition‐grown polycrystalline molybdenum ditelluride (MoTe2) TFTs with solution‐processed ternary Hf0.5Zr0.5O2/HfAlO2 high‐k dielectric. Benefitting from the optimized high quality HfAlO2 film synthesis and proper postannealing treatment, the constructed MoTe2 TFTs exhibit a high mobility ≈27.24 cm2 V−1 S−1, a current on/off ratio ≈6.43 × 105, threshold voltage ≈−3.27 V, and subthreshold swing (SS) value ≈152.4 mV dec−1, respectively. Moreover, by supplementing another solution‐processed layer of ferroelectric Hf0.5Zr0.5O2 to form double layer of HfAlO2/Hf0.5Zr0.5O2 dielectric, the device performance can be further improved with an ignorable hysteresis, increased mobility of ≈55.53 cm2 V−1 S−1, and significantly reduced SS value of ≈110.16 mV dec−1, respectively. The current investigation offers a feasible strategy to fabricate high‐performance and low‐power MoTe2 TFTs for potential TMDs‐based TFTs applications.
High performance bilayer MoTe2 transistors with co-sputtered ternary HfAlO2 high-k dielectric

Yuhui Zhang,Boyuan Di,Xiaokun Wen,Wenyu Lei,Liufan Li,Xinyue Xu,Wenchao Kong,Haixin Chang,Wenfeng Zhang

DOI: https://doi.org/10.1063/5.0183755

IF: 4

2024-03-18

Applied Physics Letters

Abstract:We demonstrated that ternary HfAlO2 amorphous film prepared with common co-sputtering technology can be a suitable gate dielectric for bilayer MoTe2 transistors. The film quality can be improved by optimizing the sputtering process and post-annealing treatment, which is superior to its binary Al2O3 and HfO2 components and satisfies gate dielectric criteria. The bilayer MoTe2 transistors with ∼29-nm-thick HfAlO2 gate dielectric exhibit an Ion/Ioff ratio of over 108 by a low operating voltage, together with a small subthreshold swing ≈ 71.22 mV/dec. These promising characteristics favor the development of high-performance and low-power ultrathin MoTe2-based beyond-silicon electronics.

physics, applied
Improved Device Performance of MoTe2 Nanoribbon Transistors with Solution-processed Ternary HfAlOx High-k Dielectric

Yuan Liu,Zijian Xie,Li Yang,Xiaokun Wen,Wenyu Lei,Haixin Chang,Wenfeng Zhang

DOI: https://doi.org/10.1109/icsict49897.2020.9278339

2020-01-01

Abstract:In this paper, we focus on improving MoTe2 nanoribbon MOSFETs device performance, with solution-processed HfAlOx high-k dielectric film compared with SiO2. First, 2H-MoTe2 nanoribbons with high purity and quality were synthesized by CVD process. Then, solution-processed synthesis of HfAlOx thin film was systematically investigated. HfAlOx thin film obtained with 0.3M precursor concentration, annealing at 400°C in mixed gas of N2(95%) + H2(5%) showed low leakage current density and high k value. Finally, improved device performance of MoTe2 nanoribbon transistors with mobility ~9.35 cm2V−1s−1, Ion/Ioff ratio ~1.85×l05, and the threshold voltage ~ -3.52V were demonstrated.
High‐Performance Large‐Scale Vertical 1T'/2H Homojunction CVD‐Grown Polycrystalline MoTe 2 Transistors

Zijian Xie,Wenyu Lei,Wenfeng Zhang,Yuan Liu,Li Yang,Xiaokun Wen,Haixin Chang

DOI: https://doi.org/10.1002/admi.202002023

IF: 5.4

2021-04-02

Advanced Materials Interfaces

Abstract:2D transition metal dichalcogenides (TMDs) have emerged as an ideal alternative to silicon in advanced electronics. Especially, MoTe2 attracts peculiar attention since it offers a unique opportunity of resolving critical electrical contacts. Currently, although MoTe2‐based coplanar semiconductor‐metal circuitry realized by epitaxial growth and chemical assembly has been demonstrated, while still suffers from the requirement of extremely accurate synthesis process control. Here, a facile strategy is demonstrated to fabricate large scale and high performance MoTe2 transistors with a 1T'/2H vertical homojunction structure by combining a spatial and phase controlled MoTe2 scalable synthesis and a scalable universal transfer method with water‐soluble poly‐vinylpyrrolidone and poly‐(vinyl alcohol) bilayer mediator. Both high quality 1T'‐ and 2H‐ MoTe2 with controlled dimensions can be scalable synthesized via a shadow mask assisted chemical vapor deposition method. These as‐synthesized MoTe2 patterns can be successfully transferred to a wide range of substrates at a high yield >80% with well‐retained properties to construct transistors with a complex vertical 1T'/2H‐MoTe2/HfAlO2 structure. The devices exhibit an on/off current ratio surpassing 104 and a typical mobility of ≈29 cm2 V−1 s−1. The developed scaled strategy of combining both scalable MoTe2 synthesis and transfer offers a feasible way for potential MoTe2‐based large‐scale electronics.

materials science, multidisciplinary,chemistry
High-Performance and Low-Power Transistors Based on Anisotropic Monolayer Β - TeO2

Shiying Guo,Hengze Qu,Wenhan Zhou,Shengyuan A. Yang,Yee Sin Ang,Jing Lu,Haibo Zeng,Shengli Zhang

DOI: https://doi.org/10.1103/physrevapplied.17.064010

IF: 4.6

2022-01-01

Physical Review Applied

Abstract:Two-dimensional (2D) semiconductors offer a promising prospect for high-performance and energyefficient devices especially in the sub-10-nm regime. Inspired by the successful fabrication of 2D /3-TeO2 and the high on:off ratio and high air stability of fabricated FETs [Zavabeti et al., Nat. Electron. 4, 277 (2021)], we provide a comprehensive investigation of the electronic structure of monolayer /3-TeO2 and the device performance of sub-10-nm MOSFETs based on this material. The anisotropic electronic structure of monolayer /3-TeO2 plays a critical role in the anisotropy of transport properties for MOSFETs. We show that the 5.2-nm gate-length n-type MOSFET holds an ultrahigh on-state current exceeding 3700 ??A/??m according to International Roadmap for Devices and Systems (IRDS) 2020 goals for highperformance devices, which is benefited by the highly anisotropic electron effective mass. Moreover, monolayer /3-TeO2 MOSFETs can fulfill the IRDS 2020 goals for both high-performance and low-power devices in terms of on-state current, subthreshold swing, delay time, and power-delay product. This study unveils monolayer /3-TeO2 as a promising candidate for ultrascaled devices in future nanoelectronics.
High‐Performance Large‐Scale Vertical 1T'/2H Homojunction CVD‐Grown Polycrystalline MoTe2 Transistors

Zijian Xie,Wenyu Lei,Wenfeng Zhang,Yuan Liu,Li Yang,Xiaokun Wen,Haixin Chang

DOI: https://doi.org/10.1002/admi.202002023

IF: 5.4

2021-01-01

Advanced Materials Interfaces

Abstract:2D transition metal dichalcogenides (TMDs) have emerged as an ideal alternative to silicon in advanced electronics. Especially, MoTe2 attracts peculiar attention since it offers a unique opportunity of resolving critical electrical contacts. Currently, although MoTe2‐based coplanar semiconductor‐metal circuitry realized by epitaxial growth and chemical assembly has been demonstrated, while still suffers from the requirement of extremely accurate synthesis process control. Here, a facile strategy is demonstrated to fabricate large scale and high performance MoTe2 transistors with a 1T'/2H vertical homojunction structure by combining a spatial and phase controlled MoTe2 scalable synthesis and a scalable universal transfer method with water‐soluble poly‐vinylpyrrolidone and poly‐(vinyl alcohol) bilayer mediator. Both high quality 1T'‐ and 2H‐ MoTe2 with controlled dimensions can be scalable synthesized via a shadow mask assisted chemical vapor deposition method. These as‐synthesized MoTe2 patterns can be successfully transferred to a wide range of substrates at a high yield >80% with well‐retained properties to construct transistors with a complex vertical 1T'/2H‐MoTe2/HfAlO2 structure. The devices exhibit an on/off current ratio surpassing 104 and a typical mobility of ≈29 cm2 V−1 s−1. The developed scaled strategy of combining both scalable MoTe2 synthesis and transfer offers a feasible way for potential MoTe2‐based large‐scale electronics.
High Performance Thermoelectric Materials Based on Metal Organic Coordination Polymers Through First‐principles Band Engineering

Jahanzeb Khan,Yunpeng Liu,Tianqi Zhao,Hua Geng,Wei Xu,Zhigang Shuai

DOI: https://doi.org/10.1002/jcc.25639

2018-01-01

Journal of Computational Chemistry

Abstract:Metal organic coordination polymers (MOCPs) provide an intriguing platform to design functional thermoelectric materials through modifying metal atoms, organic ligands, etc. Based on density functional theory (DFT) coupled with Boltzmann transport theory, the thermoelectric properties of several MOCPs, which is designed by intercalating organic linkers ranging from benzene to pentacene between two inorganic units, have been investigated. We found that the interplay of d orbital of Ni atom and π orbitals of the organic linkers play an important role in band engineering and then thermoelectric efficiency. Combining the high conductivity for π orbitals of organic ligands and high Seebeck coefficient of the d orbital of Ni atom, such intercalated MOCPs provide new way to design high performance thermoelectric materials. © 2018 Wiley Periodicals, Inc.
MoTe2 Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation

Geun Yeol Bae,Jinsung Kim,Junyoung Kim,Siyoung Lee,Eunho Lee

DOI: https://doi.org/10.3390/nano11112805

IF: 5.3

2021-10-22

Nanomaterials

Abstract:Due to their extraordinary electrical and physical properties, two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered promising for use in next-generation electrical devices. However, the application of TMD-based devices is limited because of the Schottky barrier interface resulting from the absence of dangling bonds on the TMDs’ surface. Here, we introduce a facile phase-tuning approach for forming a homogenous interface between semiconducting hexagonal (2H) and semi-metallic monoclinic (1T′) molybdenum ditelluride (MoTe2). The formation of ohmic contacts increases the charge carrier mobility of MoTe2 field-effect transistor devices to 16.1 cm2 V−1s−1 with high reproducibility, while maintaining a high on/off current ratio by efficiently improving charge injection at the interface. The proposed method enables a simple fabrication process, local patterning, and large-area scaling for the creation of high-performance 2D electronic devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Contact Engineering High Performance n-Type MoTe2 Transistors

Michal J. Mleczko,Andrew C. Yu,Christopher M. Smyth,Victoria Chen,Yong Cheol Shin,Sukti Chatterjee,Yi-Chia Tsai,Yoshio Nishi,Robert M. Wallace,Eric Pop

DOI: https://doi.org/10.1021/acs.nanolett.9b02497

2019-07-05

Abstract:Semiconducting MoTe2 is one of the few two-dimensional (2D) materials with a moderate band gap, similar to silicon. However, this material remains under-explored for 2D electronics due to ambient instability and predominantly p-type Fermi level pinning at contacts. Here, we demonstrate unipolar n-type MoTe2 transistors with the highest performance to date, including high saturation current (>400 ${\mu}A/{\mu}m$ at 80 K and >200 ${\mu}A/{\mu}m$ at 300 K) and relatively low contact resistance (1.2 to 2 $k{\Omega}\cdot{\mu}m$ from 80 to 300 K), achieved with Ag contacts and AlOx encapsulation. We also investigate other contact metals, extracting their Schottky barrier heights using an analytic subthreshold model. High-resolution X-ray photoelectron spectroscopy reveals that interfacial metal-Te compounds dominate the contact resistance. Among the metals studied, Sc has the lowest work function but is the most reactive, which we counter by inserting monolayer h-BN between MoTe2 and Sc. These metal-insulator-semiconductor (MIS) contacts partly de-pin the metal Fermi level and lead to the smallest Schottky barrier for electron injection. Overall, this work improves our understanding of n-type contacts to 2D materials, an important advance for low-power electronics.

Applied Physics,Mesoscale and Nanoscale Physics,Materials Science
Contact Engineering High-Performance n-Type MoTe2 Transistors

Michal J Mleczko,Andrew C Yu,Christopher M Smyth,Victoria Chen,Yong Cheol Shin,Sukti Chatterjee,Yi-Chia Tsai,Yoshio Nishi,Robert M Wallace,Eric Pop

DOI: https://doi.org/10.1021/acs.nanolett.9b02497

2019-09-11

Abstract:Semiconducting MoTe2 is one of the few two-dimensional (2D) materials with a moderate band gap, similar to silicon. However, this material remains underexplored for 2D electronics due to ambient instability and predominantly p-type Fermi level pinning at contacts. Here, we demonstrate unipolar n-type MoTe2 transistors with the highest performance to date, including high saturation current (>400 μA/μm at 80 K and >200 μA/μm at 300 K) and relatively low contact resistance (1.2 to 2 kΩ·μm from 80 to 300 K), achieved with Ag contacts and AlOx encapsulation. We also investigate other contact metals (Sc, Ti, Cr, Au, Ni, Pt), extracting their Schottky barrier heights using an analytic subthreshold model. High-resolution X-ray photoelectron spectroscopy reveals that interfacial metal-Te compounds dominate the contact resistance. Among the metals studied, Sc has the lowest work function but is the most reactive, which we counter by inserting monolayer hexagonal boron nitride between MoTe2 and Sc. These metal-insulator-semiconductor (MIS) contacts partly depin the metal Fermi level and lead to the smallest Schottky barrier for electron injection. Overall, this work improves our understanding of n-type contacts to 2D materials, an important advance for low-power electronics.
All-Solution-Processed High-Performance MoS 2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric

Su-Yeon Joung,Haena Yim,Donghun Lee,Jaehyung Shim,So Yeon Yoo,Yeon Ho Kim,Jin Seok Kim,Hyunjun Kim,Seok-Ki Hyeong,Junhee Kim,Yong-Young Noh,Sukang Bae,Myung Jin Park,Ji-Won Choi,Chul-Ho Lee

DOI: https://doi.org/10.1021/acsnano.3c06972

IF: 17.1

2024-01-06

ACS Nano

Abstract:Assembling solution-processed van der Waals (vdW) materials into thin films holds great promise for constructing large-scale, high-performance thin-film electronics, especially at low temperatures. While transition metal dichalcogenide thin films assembled in solution have shown potential as channel materials, fully solution-processed vdW electronics have not been achieved due to the absence of suitable dielectric materials and high-temperature processing. In this work, we report on...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Enhanced Photoresponsivity and Hole Mobility of MoTe2 Phototransistors by Using an Al2O3 High-Κ Gate Dielectric

Wenjie Chen,Renrong Liang,Jing Wang,Shuqin Zhang,Jun Xu

DOI: https://doi.org/10.1016/j.scib.2018.06.009

IF: 18.9

2018-01-01

Science Bulletin

Abstract:Molybdenum ditelluride (MoTe2) has been demonstrated great potential in electronic and optoelectronic applications. However, the reported effective hole mobility remains far below its theoretical value. Herein, taking advantage of high-kappa screening effect, we have fabricated back-gated MoTe2 transistors on an Al2O3 high-kappa dielectric and systematically investigated the electronic and optoelectronic properties. A high current on/off ratio exceeding 106 is achieved in the Al2O3-based MoTe2 transistors, and the hole mobility is demonstrated to be 150 cm(2) V-1 s(-1), compared to 0.2-20 cm(2) V-1 s(-1) ever obtained from back-gated MoTe2 transistors in the literatures. Moreover, a considerable hole concentration of 1.2x10(13) cm(-2) is attained in our Al2O3-based MoTe2 transistors owing to the strong gate control capability, leading to a high on-state hole current of 6.1 mu A mu m-1. After optimization, our Al2O3-based MoTe2 phototransistor exhibits outstanding photodetective performance, with a high responsivity of 543 AW-1 and a high photogain of 1,662 at 405 nm light illumination, which are boosted around 419 times compared to the referential SiO2-based control devices. The mechanisms of photoconductivity in the Al2O3-based MoTe2 phototransistors have been analyzed in detail, and the photogating effect is considered to play an important role. This work may provide useful insight to improve carrier mobility in two-dimensional layered semiconductors and open opportunities to facilitate the development of high-performance photodetectors in the future. (C) 2018 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.
Janus Electronic Devices with Ultrathin High-κ Gate Dielectric Directly Integrated on 1T'-MoTe 2

Enzi Chen,Qing Zhu,Yaoyu Duan,Junhao Tang,Runze Zhan,Jingwen Huang,Xi Wan,Kun Chen,Shaozhi Deng

DOI: https://doi.org/10.1021/acsami.4c15216

IF: 9.5

2024-11-28

ACS Applied Materials & Interfaces

Abstract:Integrating high-quality dielectrics with two-dimensional (2D) transition metal chalcogenides (TMDCs) is crucial for high-performance electronics. However, the lack of dangling bonds on 2D material surfaces complicates direct dielectric deposition. We propose using atomic layer deposition (ALD) to integrate ultrathin high-κ dielectric directly on 1T'-MoTe(2) surfaces, facilitating the creation of high-performance back-gated field-effect transistors (FETs). Exploiting 1T'-MoTe(2)'s natural...

materials science, multidisciplinary,nanoscience & nanotechnology
Hybrid Polymer/Metal Oxide Thin Films for High Performance, Flexible Transistors

Jae Won Jeong,Hye Suk Hwang,Dalsu Choi,Byung Chol,Jaehan Jung,Mincheol Chang,Jae Jeong,Hye Hwang,Byung Ma

DOI: https://doi.org/10.3390/mi11030264

IF: 3.4

2020-03-04

Micromachines

Abstract:Metal oxides (MOs) have garnered significant attention in a variety of research fields, particularly in flexible electronics such as wearable devices, due to their superior electronic properties. Meanwhile, polymers exhibit excellent mechanical properties such as flexibility and durability, besides enabling economic solution-based fabrication. Therefore, MO/polymer nanocomposites are excellent electronic materials for use in flexible electronics owing to the confluence of the merits of their components. In this article, we review recent developments in the synthesis and fabrication techniques for MO/polymer nanocomposite-based flexible transistors. In particular, representative MO/polymer nanocomposites for flexible and transparent channel layers and gate dielectrics are introduced and their electronic properties—such as mobilities and dielectric constant—are presented. Finally, we highlight the advances in interface engineering and its influence on device electronics.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Solution Processable Amorphous Hafnium Silicate Dielectrics and Their Application in Oxide Thin Film Transistors

Y. N. Gao,Y. L. Xu,J. G. Lu,J. H. Zhang,X. F. Li

DOI: https://doi.org/10.1039/c5tc02485d

IF: 6.4

2015-01-01

Journal of Materials Chemistry C

Abstract:Novel solution-processed amorphous high-k dielectrics for thin film transistors (TFTs) have been systemically studied with the objective of achieving high performance and reducing costs for the next generation displays.
High-performance Solution-Processed Ti3C2Tx MXene Doped ZnSnO Thin-Film Transistors Via the Formation of a Two-Dimensional Electron Gas

Tianshi Zhao,Chenguang Liu,Chun Zhao,Wangying Xu,Yina Liu,Ivona Z. Mitrovic,Eng Gee Lim,Li Yang,Ce Zhou Zhao

DOI: https://doi.org/10.1039/d1ta01355f

IF: 11.9

2021-01-01

Journal of Materials Chemistry A

Abstract:The optimization of solution-processed ZTO TFTs was successfully realized by fabricating a channel layer into a homojunction structure (MXene doped ZTO/ZTO) to form a 2DEG. The device shows excellent electrical performance with a maximum annealing temperature of ≤300 °C.
High-performance and Low-power Transistors Based on Anisotropic Monolayer $β$-TeO$_2$

Shiying Guo,Hengze Qu,Wenhan Zhou,Shengyuan A. Yang,Yee Sin Ang,Jing Lu,Haibo Zeng,Shengli Zhang

DOI: https://doi.org/10.48550/arXiv.2202.08093

2022-02-16

Abstract:Two-dimensional (2D) semiconductors offer a promising prospect for high-performance and energy-efficient devices especially in the sub-10 nm regime. Inspired by the successful fabrication of 2D $\beta$-TeO$_2$ and the high on/off ratio and high air-stability of fabricated field effect transistors (FETs) [Nat. Electron. 2021, 4, 277], we provide a comprehensive investigation of the electronic structure of monolayer $\beta$-TeO$_2$ and the device performance of sub-10 nm metal oxide semiconductors FETs (MOSFETs) based on this material. The anisotropic electronic structure of monolayer $\beta$-TeO$_2$ plays a critical role in the anisotropy of transport properties for MOSFETs. We show that the 5.2-nm gate-length n-type MOSFET holds an ultra-high on-state current exceeding 3700 {\mu}A/{\mu}m according to International Roadmap for Devices and Systems (IRDS) 2020 goals for high-performance devices, which is benefited by the highly anisotropic electron effective mass. Moreover, monolayer $\beta$-TeO$_2$ MOSFETs can fulfill the IRDS 2020 goals for both high-performance and low-power devices in terms of on-state current, sub-threshold swing, delay time, and power-delay product. This study unveils monolayer $\beta$-TeO$_2$ as a promising candidate for ultra-scaled devices in future nanoelectronics.

Mesoscale and Nanoscale Physics,Materials Science,Applied Physics
Solution Processed ZnSnO Thin-film Transistors with Peroxide- Aluminum Oxide Dielectric.

T. S. Zhao,C. Zhao,C. Z. Zhao,W. Y. Xu,L. Yang,I. Z. Mitrovic,S. Hall,E. G. Lim,S. C. Yu

DOI: https://doi.org/10.1109/icicdt.2019.8790915

2019-01-01

Abstract:In this work, we investigate an fabricating route of solution-processed thin-film transistors (TFTs). The high-k dielectric layers of aluminum oxide (AlO) were optimized through hydrogen peroxide (H 2 O 2 ). With Zn incorporation in tin oxide (SnO) semiconductor layer, the ZnSnO TFT with a field effect mobility of 4.3 cm 2 ·V -1 ·s -1 , a threshold voltage of 2 V, a subthreshold swing of 0.16 V/dec and an on/off ratio of 10 6 .
P‐7.10: Facile low‐temperature solution‐processed ZrO2 films as high‐k dielectrics for flexible low ‐ power thin‐film transistors

Xianzhe Liu,Ao Chen,Yingxin Li,Youbin Chen,Tingting Zhang,Jiacong Wu,Tian Qiu,Honglong Ning,Rihui Yao,Jianyi Luo

DOI: https://doi.org/10.1002/sdtp.16397

2023-01-01

SID Symposium Digest of Technical Papers

Abstract:Wearable electronics represented by flexible displays and flexible sensors have been attracting enormous attention due to portability, miniaturization and low power consumption. Due to the dramatic increase in the number of display and sensing units, the power consumption and accuracy of the devices are facing great challenges. Active‐matrix thin‐film transistor (TFT) backplanes can effectively reduce signal crosstalk and power consumption of wearable electronics. For TFT devices, the gate insulation layer is one of key factors affecting the device performance such as device mobility, operating voltage, and bias stability, etc. High quality of solution‐processed oxide dielectric films usually are obtained at a high temperature (>400 °C), being a challenge for compatibility with flexible plastic substrates. In this work, low‐temperature annealing processes (the electric oven (EO) and deep ultraviolet (DUV) processing) of high‐k zirconia dielectric films was investigated. Compared to the thermal annealing process, the EO or DUV processing‐annealing process could obtain an approximate dielectric properties with that of thermal annealing process. The EO and DUV processing could effectively promoted the MO framework and the elimination of oxygen defects in the spin‐coating films. DUV processing ZrO 2 film annealed at 150 °C exhibited an excellent properties including a large capacitance of 220 nF/cm 2 and low leakage current of ~10 ‐7 A/cm 2 . These data suggest that combining low‐temperature annealing with EO and DUV irradiation holds great promise for the rapid, low‐temperature production of high‐quality and flexible oxide electronic devices.
High-performance and Low-power Transistors Based on Anisotropic Monolayer $\beta$-TeO$_2$

Shiying Guo,Hengze Qu,Wenhan Zhou,Shengyuan A. Yang,Yee Sin Ang,Jing Lu,Haibo Zeng,Shengli Zhang

DOI: https://doi.org/10.48550/arxiv.2202.08093

2022-01-01

Abstract: Two-dimensional (2D) semiconductors offer a promising prospect for high-performance and energy-efficient devices especially in the sub-10 nm regime. Inspired by the successful fabrication of 2D $\beta$-TeO$_2$ and the high on/off ratio and high air-stability of fabricated field effect transistors (FETs) [Nat. Electron. 2021, 4, 277], we provide a comprehensive investigation of the electronic structure of monolayer $\beta$-TeO$_2$ and the device performance of sub-10 nm metal oxide semiconductors FETs (MOSFETs) based on this material. The anisotropic electronic structure of monolayer $\beta$-TeO$_2$ plays a critical role in the anisotropy of transport properties for MOSFETs. We show that the 5.2-nm gate-length n-type MOSFET holds an ultra-high on-state current exceeding 3700 {\mu}A/{\mu}m according to International Roadmap for Devices and Systems (IRDS) 2020 goals for high-performance devices, which is benefited by the highly anisotropic electron effective mass. Moreover, monolayer $\beta$-TeO$_2$ MOSFETs can fulfill the IRDS 2020 goals for both high-performance and low-power devices in terms of on-state current, sub-threshold swing, delay time, and power-delay product. This study unveils monolayer $\beta$-TeO$_2$ as a promising candidate for ultra-scaled devices in future nanoelectronics.

High‐Performance and Low‐Power Polycrystalline MoTe 2 Thin Film Transistors with Solution‐Processed Ternary Oxide High‐k Dielectric

High‐Performance and Low‐Power Polycrystalline MoTe2 Thin Film Transistors with Solution‐Processed Ternary Oxide High‐k Dielectric

High performance bilayer MoTe2 transistors with co-sputtered ternary HfAlO2 high-k dielectric

Improved Device Performance of MoTe2 Nanoribbon Transistors with Solution-processed Ternary HfAlOx High-k Dielectric

High‐Performance Large‐Scale Vertical 1T'/2H Homojunction CVD‐Grown Polycrystalline MoTe 2 Transistors

High-Performance and Low-Power Transistors Based on Anisotropic Monolayer Β - TeO2

High‐Performance Large‐Scale Vertical 1T'/2H Homojunction CVD‐Grown Polycrystalline MoTe2 Transistors

High Performance Thermoelectric Materials Based on Metal Organic Coordination Polymers Through First‐principles Band Engineering

MoTe2 Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation

Contact Engineering High Performance n-Type MoTe2 Transistors

Contact Engineering High-Performance n-Type MoTe2 Transistors

All-Solution-Processed High-Performance MoS 2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric

Enhanced Photoresponsivity and Hole Mobility of MoTe2 Phototransistors by Using an Al2O3 High-Κ Gate Dielectric

Janus Electronic Devices with Ultrathin High-κ Gate Dielectric Directly Integrated on 1T'-MoTe 2

Hybrid Polymer/Metal Oxide Thin Films for High Performance, Flexible Transistors

Solution Processable Amorphous Hafnium Silicate Dielectrics and Their Application in Oxide Thin Film Transistors

High-performance Solution-Processed Ti3C2Tx MXene Doped ZnSnO Thin-Film Transistors Via the Formation of a Two-Dimensional Electron Gas

High-performance and Low-power Transistors Based on Anisotropic Monolayer $β$-TeO$_2$

Solution Processed ZnSnO Thin-film Transistors with Peroxide- Aluminum Oxide Dielectric.

P‐7.10: Facile low‐temperature solution‐processed ZrO<sub>2</sub> films as high‐k dielectrics for flexible low ‐ power thin‐film transistors

High-performance and Low-power Transistors Based on Anisotropic Monolayer $\beta$-TeO$_2$