Abstract:Contriving an industry-compatible method for fabricating purely high-quality p-type two-dimensional (2D) field effect transistors (FETs) has been proved to be pressing but challenging due to the strong interfacial coupling and thus tight Fermi level pinning (FLP). Herein, by employing density functional theory calculations, a straightforward but effective strategy is proposed to achieve high-quality p-type contact in few-layer TeO 2 –Pt junction by using a build-in intercalation to suppress the FLP and shield the damage from electrodes to the excellent electrical properties of TeO 2 such as its ultra-high hole mobility. Specifically, the increase of TeO 2 layer number will make the charge distribution of VBM and CBM be more lumped in the inner core layer, as a result, the outlying Te–O sublayer can act as an inserting layer like BN to protect the semiconducting electronic states and avoid gap-state pinning. Thus, as the TeO 2 layer increases from 1 L to 3 L, (I) strong FLP in metal-TeO 2 interfaces is gradually unpinned; (II) the polarity of Pt–TeO 2 contact reverses from n-type to p-type; (III) the excellent electrical properties of TeO 2 such as hole effective mass is preserved as original despite strong charge transfer occurring at the interface. Besides, the tunnelling barrier at the interface is close to zero. This is quite different from introducing an extern BN intercalation, in which case the tunnelling through BN will prominently reduce the overall hole current. In addition, the contacts between 2D metal electrodes and monolayer TeO 2 are found to obey the Schottky-Mott rule, and thereby p-type Ohmic contacts can be obtained at TeO 2 -VS 2 , NbS 2 interfaces. Whereas, a relatively large tunnelling barrier exists at the 2D metal-TeO 2 interfaces. Our findings are quite essential and beneficial for designing high-performance p-type 2D FETs.

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High-Performance and Low-Power Transistors Based on Anisotropic Monolayer Β - TeO2

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High-performance Sub-10 Nm Monolayer Bi2O2Se Transistors

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Realization of Fermi level unpinning and high-quality p-type contacts for 2D β-TeO 2 by a built-in intercalation

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High-Performance Complementary Circuits from Two-Dimensional MoTe 2

Ultralow Voltage Operation of p- and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium

Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

Promising Properties of Sub-5 nm Monolayer MoSi2N4 Transistor

Theoretical dissection of the electronic anisotropy and quantum transport of ultrascaled halogenated borophene MOSFETs

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Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors

Quasi-two-dimensional β-Ga2O3 field effect transistors with large drain current density and low contact resistance via controlled formation of interfacial oxygen vacancies

Single-crystalline metal-oxide dielectrics for top-gate 2D transistors

Sub-5 Nm Monolayer Arsenene and Antimonene Transistors

Sub 10 nm Bilayer Bi 2 O 2 Se Transistors

Performance Limit of Monolayer WSe₂ Transistors; Significantly Outperform Their MoS₂ Counterpart

Sub-5-nm Ultra-thin In$_2$O$_3$ Transistors for High-Performance and Low-Power Electronic Applications