Abstract:Contact engineering on monolayer layer (ML) semiconducting transition metal dichalcogenides (TMDs) is considered the most challenging problem toward using these materials as a transistor channel in future advanced technology nodes. The typically observed strong Fermi-level pinning induced in part by the reaction of the source/drain contact metal and the ML TMD frequently results in a large Schottky barrier height, which limits the electrical performance of ML TMD field-effect transistors (FETs). However, at a microscopic level, little is known about how interface defects or reaction sites impact the electrical performance of ML TMD FETs. In this work, we have performed statistically meaningful electrical measurements on at least 120 FETs combined with careful surface analysis to unveil contact resistance dependence on interface chemistry. In particular, we achieved a low contact resistance for ML MoS2 FETs with ultrahigh-vacuum (UHV, 3 × 10-11 mbar) deposited Ni contacts, ∼500 Ω·μm, which is 5 times lower than the contact resistance achieved when deposited under high-vacuum (HV, 3 × 10-6 mbar) conditions. These electrical results strongly correlate with our surface analysis observations. X-ray photoelectron spectroscopy (XPS) revealed significant bonding species between Ni and MoS2 under UHV conditions compared to that under HV. We also studied the Bi/MoS2 interface under UHV and HV deposition conditions. Different from the case of Ni, we do not observe a difference in contact resistance or interface chemistry between contacts deposited under UHV and HV. Finally, this article also explores the thermal stability and reliability of the two contact metals employed here.

Reduced Schottky Barrier Height at Metal/cvd-Grown MoTe2 Interface

Reduced Schottky barrier height at metal/CVD-grown MoTe<sub>2</sub> interface

Low-resistivity Ohmic contacts of Ti/Al on few-layered 1T'-MoTe2/2H-MoTe2 heterojunctions grown by chemical vapor deposition

Largely Reducing the Contact Resistance of Molybdenum Ditelluride by In Situ Potassium Modification

Tuning the Schottky barrier height in single- and bi-layer graphene-inserted MoS2/metal contacts

Contact Engineering of Molybdenum Ditelluride Field Effect Transistors Through Rapid Thermal Annealing

High performance bilayer MoTe2 transistors with co-sputtered ternary HfAlO2 high-k dielectric

Insertion Of An Ultrathin Al2o3 Interfacial Layer For Schottky Barrier Height Reduction In Ws2 Field-Effect Transistors

Monolayer MoS2-based Transistors with Low Contact Resistance by Inserting Ultrathin Al2O3 Interfacial Layer

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Alleviation of Schottky barrier heights at TMDs/metal interfaces with a tunneling layer of semiconducting InSe nanoflake

Resolving Interface Barrier Deviation from the Schottky-Mott Rule: A Mitigation Strategy Via Engineering MoS2-Metal Van Der Waals Contact

Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2 /MoTe2 Heterostructures

The Contact Properties of Monolayer and Multilayer MoS2-Metal van der Waals Interfaces

MoTe2 Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation

Tuning Schottky Barrier Height in Metal/n-Type Germanium by Inserting an Ultrathin Yttrium Oxide Film

Schottky Barrier Formation at Metal Electrodes and Semiconducting Carbon Nanotubes

MoS2 Transistor with Weak Fermi Level Pinning via MXene Contacts

Strain Engineering for Enhancing Carrier Mobility in MoTe2 Field-Effect Transistors

Improved Device Performance of MoTe2 Nanoribbon Transistors with Solution-processed Ternary HfAlOx High-k Dielectric

Designing Barrier-Free Metal/MoS 2 Contacts through Electrene Insertion