Abstract:Recent experiment has uncovered semimetal bismuth (Bi) as an excellent electrical contact to monolayer MoS2 with ultralow contact resistance. The contact physics of the broader semimetal/monolayer-semiconductor family beyond Bi/MoS2, however, remains largely unexplored thus far. Here we perform a comprehensive first-principle density functional theory investigation on the electrical contact properties between six archetypal two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors, i.e. MoS2, WS2, MoSe2, WSe2, MoTe2 and WTe2, and two representative types of semimetals, Bi and antimony (Sb). As Bi and Sb work functions energetically aligns well with the TMDC conduction band edge, Ohmic or nearly-Ohmic n-type contacts are prevalent. The interlayer distance of semimetal/TMDC contacts are significantly larger than that of the metal/TMDC counterparts, which results in only weak metalization of TMDC upon contact formation. Intriguingly, such weak metalization generates semimetal-induced gap states (SMIGSs) that extends below the conduction band minimum, thus offering an effective mechanism to reduce or eliminate the n-type Schottky barrier height (SBH) while still preserving the electronic structures of 2D TMDC. A modified Schottky-Mott rule that takes into account SMIGS, interface dipole potential, and Fermi level shifting is proposed, which provides an improved agreement with the density functional theory-simulated SBH. We further show that the tunneling-specific resistivity of Sb/TMDC contacts are generally lower than the Bi counterparts, thus indicating a better charge injection efficiency can be achieved through Sb contacts. Our findings reveal the promising potential of Bi and Sb as excellent companion electrode materials for advancing 2D semiconductor device technology.

Resolving Interface Barrier Deviation from the Schottky-Mott Rule: A Mitigation Strategy Via Engineering MoS2-Metal Van Der Waals Contact

Non-invasively Improving the Schottky Barrier of MoS2/metal Contacts by Inserting a SiC Layer

Fermi Level Unpinning and Schottky Barrier Modification by Ti, Sc and V Incorporation at Nisi2/Si Interface

Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt(Ni)-MoS2 and Bi-MoS2(WSe2) as the prototype

Interfacial Defect Engineering on Electronic States and Electrical Properties of MoS2/metal Contacts

Suppressing the vdW Gap‐Induced Tunneling Barrier by Constructing Interfacial Covalent Bonds in 2D Metal–Semiconductor Contacts

Alleviation of Schottky barrier heights at TMDs/metal interfaces with a tunneling layer of semiconducting InSe nanoflake

The Contact Properties of Monolayer and Multilayer MoS2-Metal van der Waals Interfaces

Revealing the Weak Fermi Level Pinning Effect of 2D Semiconductor/2d Metal Contact: A Case of Monolayer In2Ge2Te6 and Its Janus Structure In2Ge2Te3Se3

Insertion Of An Ultrathin Al2o3 Interfacial Layer For Schottky Barrier Height Reduction In Ws2 Field-Effect Transistors

P-type Schottky-barrier-free Contact to MoS_{2} Via Layer-Number-assisted Interface Engineering

Semimetal contacts to monolayer semiconductor: weak metalization as an effective mechanism to Schottky barrier lowering

Dipole-Engineering Strategy for Regulating the Electronic Contact of a Two-Dimensional SbX/Graphene (X = P, As, Bi) Van Der Waals Interface

Interfacial Properties of Monolayer and Bilayer MoS 2 Contacts with Metals: Beyond the Energy Band Calculations

Gate-tunable Contact-Induced Fermi-level Shift in Semimetal

Strain-engineered Robust and Schottky-barrier-free Contact in 2D Metal–semiconductor Heterostructure

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Modulating the Schottky Barriers in MoS2/MXenes Heterostructures Via Surface Functionalization and Electric Field

Reduced Schottky Barrier Height at Metal/cvd-Grown MoTe2 Interface

Tunable Schottky Barrier and Efficient Ohmic Contacts in MSi2N4 (M = Mo, W)/2D Metal Contacts

Electrical Contact Barriers Between 3D Metal and Layered SnS2.