Abstract:Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device applications requires a connection between a metal junction and a TMD semiconductor. Hence, a complete understanding of electronic band alignments and the potential barrier heights governing the transport through a metal-TMD-metal junction is critical. But, there is a knowledge gap; it is not clear how the energy bands of a TMD align while in contact with a metal as a function of the number of layers. In pursuit of removing this knowledge gap, we have performed conductive atomic force microscopy (CAFM) of few layered (1-5) MoS2 immobilized on ultra-flat conducting Au surfaces (root mean square (RMS) surface roughness <0.2 nm) and indium tin oxide (ITO) substrate (RMS surface roughness <0.7 nm) forming a vertical metal (conductive-AFM tip)-semiconductor-metal device. We have observed that the current increases as the number of layers increases up to 5 layers. By applying Fowler-Nordheim tunneling theory, we have determined the barrier heights for different layers and observed that the barrier height decreases as the number of layers increases. Using density functional theory (DFT) calculation, we successfully demonstrated that the barrier height decreases as the layer number increases. By illuminating the TMDs on a transparent ultra-flat conducting ITO substrate, we observed a reduction in current when compared to the current measured in the dark, hence demonstrating negative photoconductivity. Our study provides a fundamental understanding of the local electronic and optoelectronic behaviors of TMD-metal junction, and may pave an avenue toward developing nanoscale electronic devices with tailored layer-dependent transport properties.

Charge distribution at metal-multilayered semiconductor interfaces

Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt(Ni)-MoS2 and Bi-MoS2(WSe2) as the prototype

Interfacial Properties of Monolayer and Bilayer MoS 2 Contacts with Metals: Beyond the Energy Band Calculations

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Influence of MoS 2 -metal interface on charge injection: a comparison between various metal contacts

Dual Transmission Channels at Metal–MoS2/WSe2 Hetero-bilayer Interfaces

Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors

The Contact Properties of Monolayer and Multilayer MoS2-Metal van der Waals Interfaces

Toward barrier free contact to MoSe2/WSe2 heterojunctions using two-dimensional metal electrodes

Layer-Dependent Electron Transfer and Recombination Processes in MoS2/WSe2 Multilayer Heterostructures.

Fermi-level depinning in metal-2D multilayered semiconductor junctions

Mechanistic Understanding of the Interfacial Properties of Metal-PtSe2 Contacts

Investigation of Interface Interactions Between Monolayer MoS 2 and Metals: Implications on Strain and Surface Roughness

Prospects of Zero Schottky Barrier Height in a Graphene Inserted MoS2-Metal Interface

Exploring charge transfer and schottky barrier modulation at monolayer Ge2Sb2Te5-metal interfaces

Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals

Exploring Charge Transfer and Schottky Barrier Modulation at Monolayer Ge 2 Sb 2 Te 5 -Metal Interfaces

Tuning the Schottky barrier height in single- and bi-layer graphene-inserted MoS2/metal contacts

Effects Of Interlayer Coupling And Electric Fields On The Electronic Structures Of Graphene And Mos2 Heterobilayers

Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions

An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal-Semiconductor Heterojunctions