Abstract:In the design of electronic devices based on two-dimensional heterojunctions, the contact between electrodes and different surfaces of two-dimensional heterojunctions may produce different effects. Furthermore, metal-semiconductor contact plays an important role in modern devices. However, due to the Fermi level pinning effect (FLPE), it is difficult to tune the Schottky barrier height between common metals (e.g. Au, Ag, and Cu) and semiconductors. Fortunately, the FLPE becomes weak at the contact between the 2D metal and 2D semiconductor, due to the suppression of metal-induced gap states. Here, we choose monolayer NbS2 as the electrode to be in contact with the MoSe2/WSe2 bilayer. The interfacial properties as well as the stacking dependence are discussed based on the density functional theory, combined with the nonequilibrium Green's functions. Two configurations are considered, i.e. the WSe2/MoSe2/NbS2 and MoSe2/WSe2/NbS2 stacking sequences. Our results show that barrier free contact can be formed in these 2D metal-semiconductor junctions (MSJs). In addition, the transport properties of the proposed devices are sensitive to the stacking sequence. The drain-source current versus bias voltage (I-V) curve exhibits a linear relationship for the WSe2/MoSe2/NbS2 system and its resistance is much lower than the MoSe2/WSe2/NbS2 MSJ. Detailed analysis reveals that the transport properties are governed by the electronic coupling between specific interlayer states. In WSe2/MoSe2/NbS2 configuration, large overlapping states are observed, which facilitate charge transfer and result in good ohmic contact. Our work may provide a theoretical guidance for the designing of next-generation ultrathin and flexible devices.

Dual Transmission Channels at Metal–MoS2/WSe2 Hetero-bilayer Interfaces

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Toward barrier free contact to MoSe2/WSe2 heterojunctions using two-dimensional metal electrodes

Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T'/2H MoS2 Heterobilayers.

Interfacial Properties of Monolayer and Bilayer MoS 2 Contacts with Metals: Beyond the Energy Band Calculations

Layer-Dependent Electron Transfer and Recombination Processes in MoS2/WSe2 Multilayer Heterostructures.

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Charge distribution at metal-multilayered semiconductor interfaces

Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt(Ni)-MoS2 and Bi-MoS2(WSe2) as the prototype

Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T'/2H MoS 2 Heterobilayers

Geometric, electronic, and optical properties of MoS 2 /WSSe van der Waals heterojunctions: a first-principles study

Charge Transfer Properties of Heterostructures Formed by Bi2O2Se and Transition Metal Dichalcogenide Monolayers

Mechanistic Understanding of the Interfacial Properties of Metal-PtSe2 Contacts

Ohmic contacts in MXene/MoSi2N4 heterojunctions

Theoretical Analysis of a Two-Dimensional Metallic/Semiconducting Transition-Metal Dichalcogenide NbS2//WSe2 Hybrid Interface

Pervasive Ohmic Contacts in Bilayer Bi2O2Se–Metal Interfaces

ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors.

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides