Abstract:Recent experiment has uncovered semimetal bismuth (Bi) as an excellent electrical contact to monolayer MoS2 with ultralow contact resistance. The contact physics of the broader semimetal/monolayer-semiconductor family beyond Bi/MoS2, however, remains largely unexplored thus far. Here we perform a comprehensive first-principle density functional theory investigation on the electrical contact properties between six archetypal two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors, i.e. MoS2, WS2, MoSe2, WSe2, MoTe2 and WTe2, and two representative types of semimetals, Bi and antimony (Sb). As Bi and Sb work functions energetically aligns well with the TMDC conduction band edge, Ohmic or nearly-Ohmic n-type contacts are prevalent. The interlayer distance of semimetal/TMDC contacts are significantly larger than that of the metal/TMDC counterparts, which results in only weak metalization of TMDC upon contact formation. Intriguingly, such weak metalization generates semimetal-induced gap states (SMIGSs) that extends below the conduction band minimum, thus offering an effective mechanism to reduce or eliminate the n-type Schottky barrier height (SBH) while still preserving the electronic structures of 2D TMDC. A modified Schottky-Mott rule that takes into account SMIGS, interface dipole potential, and Fermi level shifting is proposed, which provides an improved agreement with the density functional theory-simulated SBH. We further show that the tunneling-specific resistivity of Sb/TMDC contacts are generally lower than the Bi counterparts, thus indicating a better charge injection efficiency can be achieved through Sb contacts. Our findings reveal the promising potential of Bi and Sb as excellent companion electrode materials for advancing 2D semiconductor device technology.

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Interfacial Properties of Monolayer and Bilayer MoS 2 Contacts with Metals: Beyond the Energy Band Calculations

Interfacial Properties of Monolayer MoSe2–Metal Contacts

Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt(Ni)-MoS2 and Bi-MoS2(WSe2) as the prototype

Interfacial Properties Of Monolayer Sns-Metal Contacts

Junction-configuration-dependent interfacial electronic states of a monolayer MoS2/metal contact

Schottky Barrier Heights and Mechanism of Charge Transfer at Metal-Bi2os2 Interfaces

Influence of MoS2-metal Interface on Charge Injection: a Comparison Between Various Metal Contacts.

The Contact Properties of Monolayer and Multilayer MoS2-Metal van der Waals Interfaces

Influence of MoS 2 -metal interface on charge injection: a comparison between various metal contacts

Interfacial Properties for a Monolayer CrS2 Contact with Metal: A Theoretical Perspective

Monolayer Bismuthene-Metal Contacts: A Theoretical Study

Charge distribution at metal-multilayered semiconductor interfaces

First-principles simulation of monolayer hydrogen passivated Bi2O2S2-metal interfaces

Interfacial Defect Engineering on Electronic States and Electrical Properties of MoS2/metal Contacts

The Modulation of Schottky Barriers of Metal-Mos2 Contacts Via Bn-Mos2 Heterostructures

Uncovering the Effects of Metal Contacts on Monolayer MoS2

Mechanistic Understanding of the Interfacial Properties of Metal-PtSe2 Contacts

Non-invasively Improving the Schottky Barrier of MoS2/metal Contacts by Inserting a SiC Layer

Reexamination of the Schottky Barrier Heights in Monolayer MoS2 Field-Effect Transistors

Semimetal contacts to monolayer semiconductor: weak metalization as an effective mechanism to Schottky barrier lowering