Abstract:Thickness has been proved to have significant influence on the physical properties of two-dimensional (2D) materials and their corresponding devices. Understanding the effect of the thickness of 2D insertions on the contact properties of metal-monolayer MoS interfaces (viz. metal-mMoS interfaces) is vital to designing high performance mMoS devices. In this work, the electronic structures, Schottky barriers, contact resistance, and tunneling barriers of scandium-mMoS (Sc-mMoS) interfaces with BN and graphene insertions have been comparatively studied by density functional theory. No Schottky barriers are found at Sc-mMoS interfaces with monolayer 2D insertions. Although the contact resistance and charge injection efficiency of Sc-mMoS interfaces with monolayer insertions deteriorate relatively to those of the Sc-mMoS interface, they are still sufficient to realize high-performance mMoS-based devices. Note that, upon increasing the number of layers of 2D insertions, these contact properties are further deteriorated with the increasing number of layers of insertions. Moreover, additional significant Schottky barriers are introduced into Sc-mMoS interfaces with multilayer BN; the nature Dirac points of graphene insertions are opened, suggesting low performances of Sc-mMoS interfaces with multilayer BN and graphene insertions. These variations can be understood on the basis of the orbital hybridization and charge redistribution between the Sc slab and mMoS layer. In addition, these characteristics are expected to occur in other metal-mMoS interfaces with two-dimensional material insertions. Overall, monolayer rather than multilayer two-dimensional insertions can be used to improve the transport properties of mMoS-based devices.

Interfacial Properties of Monolayer and Bilayer MoS 2 Contacts with Metals: Beyond the Energy Band Calculations

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Interfacial Properties of Monolayer MoSe2–Metal Contacts

Schottky Barrier Heights and Mechanism of Charge Transfer at Metal-Bi2os2 Interfaces

Junction-configuration-dependent interfacial electronic states of a monolayer MoS2/metal contact

Interfacial Properties Of Monolayer Sns-Metal Contacts

Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt(Ni)-MoS2 and Bi-MoS2(WSe2) as the prototype

Interfacial Properties for a Monolayer CrS2 Contact with Metal: A Theoretical Perspective

The Contact Properties of Monolayer and Multilayer MoS2-Metal van der Waals Interfaces

Influence of MoS2-metal Interface on Charge Injection: a Comparison Between Various Metal Contacts.

Influence of MoS 2 -metal interface on charge injection: a comparison between various metal contacts

Monolayer Bismuthene-Metal Contacts: A Theoretical Study

Interfacial Defect Engineering on Electronic States and Electrical Properties of MoS2/metal Contacts

Charge distribution at metal-multilayered semiconductor interfaces

First-principles simulation of monolayer hydrogen passivated Bi2O2S2-metal interfaces

Mechanistic Understanding of the Interfacial Properties of Metal-PtSe2 Contacts

Uncovering the Effects of Metal Contacts on Monolayer MoS2

Non-invasively Improving the Schottky Barrier of MoS2/metal Contacts by Inserting a SiC Layer

The Modulation of Schottky Barriers of Metal-Mos2 Contacts Via Bn-Mos2 Heterostructures

Designing high performance metal-mMoS 2 interfaces by two-dimensional insertions with suitable thickness.

Dual Transmission Channels at Metal–MoS2/WSe2 Hetero-bilayer Interfaces