Interfacial Properties Of Monolayer Sns-Metal Contacts

Li Sibai,Xiao Weiji,Pan Yuanyuan,Jie Jianshu,Xin Chao,Zheng Jiaxin,Lu Jing,Pan Feng

DOI: https://doi.org/10.1021/acs.jpcc.8b03308

2018-01-01

Abstract:Two-dimensional semiconducting SnS is expected to have great potential for application in nanoelectronics. By using both ab initio electronic structure calculations and more reliable quantum transport simulations, we systematically explored the interfacial properties of monolayer (ML) SnS in contact with a series of metals (Ag, Al, Au, Pd, Cu, and Ni) for the first time. According to the adsorption level, three categories are found: strong adsorption is found in ML SnS-Pd and Ni contacts; medium adsorption is found in ML SnS-Cu contacts; and weak adsorption is found in ML SnS-Ag, Al, and Au contacts. Because the band structure of ML SnS is destroyed in all of the contact systems, a vertical Schottky barrier at the ML SnS-metal interface is absent. However, at the metalized-SnS/uncontacted-SnS interface in a transistor configuration, a lateral Schottky contact is always formed as a result of strong Fermi level pinning (with a pinning factor of 0.17-0.28) according to the quantum transport simulations. This work provides guidelines to design ML SnS-based devices with optimized electrode contact for high performance.