Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides

Hui Fang,Corsin Battaglia,Carlo Carraro,Slavomir Nemsak,Burak Ozdol,Jeong Seuk Kang,Hans A. Bechtel,Sujay B. Desai,Florian Kronast,Ahmet A. Unal,Giuseppina Conti,Catherine Conlon,Gunnar K. Palsson,Michael C. Martin,Andrew M. Minor,Charles S. Fadley,Eli Yablonovitch,Roya Maboudian,Ali Javey
DOI: https://doi.org/10.1073/pnas.1405435111
IF: 11.1
2014-04-14
Proceedings of the National Academy of Sciences
Abstract:Significance A new class of heterostructures consisting of layered transition metal dichalcogenide components can be designed and built by van der Waals (vdW) stacking of individual monolayers into functional multilayer structures. Nonetheless, the optoelectronic properties of this new type of vdW heterostructure are unknown. Here, we investigate artificial semiconductor heterostructures built from single-layer WSe 2 and MoS 2 . We observe spatially direct absorption but spatially indirect emission in this heterostructure, with strong interlayer coupling of charge carriers. The coupling at the hetero-interface can be readily tuned by inserting hexagonal BN dielectric layers into the vdW gap. The generic nature of this interlayer coupling is expected to yield a new family of semiconductor heterostructures having tunable optoelectronic properties through customized composite layers.
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