Semiconducting van der Waals Interfaces as Artificial Semiconductors

Evgeniy Ponomarev,Nicolas Ubrig,Ignacio Gutiérrez-Lezama,Helmuth Berger,Alberto F. Morpurgo

DOI: https://doi.org/10.1021/acs.nanolett.8b02066

2018-07-22

Abstract:Recent technical progress demonstrates the possibility of stacking together virtually any combination of atomically thin crystals of van der Waals bonded compounds to form new types of heterostructures and interfaces. As a result, there is the need to understand at a quantitative level how the interfacial properties are determined by the properties of the constituent 2D materials. We address this problem by studying the transport and optoelectronic response of two different interfaces based on transition-metal dichalcogenide monolayers, namely WSe2-MoSe2 and WSe2-MoS2. By exploiting the spectroscopic capabilities of ionic liquid gated transistors, we show how the conduction and valence bands of the individual monolayers determine the bands of the interface, and we establish quantitatively (directly from the measurements) the energetic alignment of the bands in the different materials as well as the magnitude of the interfacial band gap. Photoluminescence and photocurrent measurements allow us to conclude that the band gap of the WSe2-MoSe2 interface is direct in k space, whereas the gap of WSe2/MoS2 is indirect. For WSe2/MoSe2, we detect the light emitted from the decay of interlayer excitons and determine experimentally their binding energy using the values of the interfacial band gap extracted from transport measurements. The technique that we employed to reach this conclusion demonstrates a rather-general strategy for characterizing quantitatively the interfacial properties in terms of the properties of the constituent atomic layers. The results presented here further illustrate how van der Waals interfaces of two distinct 2D semiconducting materials are composite systems that truly behave as artificial semiconductors, the properties of which can be deterministically defined by the selection of the appropriate constituent semiconducting monolayers.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The core problem that this paper attempts to solve is to understand the electronic and photoelectric properties of van der Waals heterojunction interfaces composed of two - dimensional materials (especially monolayer transition metal dichalcogenides). Specifically, the author hopes to quantify the relationship between the interface properties and the properties of the two - dimensional materials that constitute these interfaces by studying the transport and photoelectric response characteristics of these interfaces.

### Main problem decomposition

1. **Interface band structure**:
- Study how the conduction band and valence band of two different interfaces, WSe₂/MoSe₂ and WSe₂/MoS₂, are determined by their respective monolayer materials.
- Determine the band alignment and bandgap size of these interfaces through ion - liquid - gated field - effect transistor (FET) experiments.

2. **Interface bandgap characteristics**:
- Use photoluminescence (PL) and photocurrent (PC) measurements to explore whether the bandgap of these interfaces is a direct bandgap or an indirect bandgap.
- For the WSe₂/MoSe₂ interface, detect the emission of interlayer excitons and determine their binding energy through experiments.

3. **Interface as an artificial semiconductor**:
- Prove that these van der Waals interfaces can work like naturally occurring two - dimensional semiconductors, and their properties can be determined by selecting appropriate constituent monolayer materials.
- Through experimental verification, show that the low - energy photoelectric response of these interfaces is completely determined by the selection of constituent monolayer materials.

### Experimental methods and techniques

- **Ion - liquid - gated FET**: Used to measure the current - voltage characteristics of different parts (monolayer materials and their interfaces), thereby determining the band offset and bandgap.
- **Photoluminescence (PL) and photocurrent (PC) measurements**: Used to probe the optical properties of the interface, judge the type of bandgap (direct or indirect), and determine the binding energy of interlayer excitons.

### Conclusion

The paper shows that the WSe₂/MoSe₂ interface has a direct bandgap, while the WSe₂/MoS₂ interface has an indirect bandgap. Through systematic research, the author proves that these van der Waals interfaces can be regarded as "artificial semiconductors", and their properties can be regulated by selecting appropriate constituent monolayer materials. This finding provides an important theoretical and experimental basis for further designing and developing new two - dimensional material devices.

### Formula summary

- **Bandgap calculation**:
\[
\Delta = e(V_{\text{th}}^e - V_{\text{th}}^h)
\]
where \( V_{\text{th}}^e \) and \( V_{\text{th}}^h \) are the threshold voltages of electrons and holes respectively.

- **Interlayer exciton binding energy**:
\[
E_{X_0}^i = \Delta - E_{\text{PL}}
\]
where \( \Delta \) is the interface bandgap and \( E_{\text{PL}} \) is the photoluminescence energy.

These formulas and conclusions provide an important basis for understanding and designing new electronic and photoelectric devices based on van der Waals heterojunctions.