Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals

Hao Lee,S. Deshmukh,Jing Wen,V.Z. Costa,J. S. Schuder,M. Sanchez,A. S. Ichimura,Eric Pop,Bin Wang,A. K. M. Newaz

DOI: https://doi.org/10.1021/acsami.9b09868

2019-08-02

Abstract:Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device applications requires a connection between a metal junction and a TMD semiconductor. Hence, a complete understanding of electronic band alignments and the potential barrier heights governing the transport through a metal-TMD-metal junction is critical. But, there is a knowledge gap; it is not clear how the energy bands of a TMD align while in contact with a metal as a function of the number of layers. In pursuit of removing this knowledge gap, we have performed conductive atomic force microscopy (CAFM) of few layered (1-5) MoS2 immobilized on ultra-flat conducting Au surfaces (root mean square (RMS) surface roughness <0.2 nm) and indium tin oxide (ITO) substrate (RMS surface roughness <0.7 nm) forming a vertical metal (conductive-AFM tip)-semiconductor-metal device. We have observed that the current increases as the number of layers increases up to 5 layers. By applying Fowler-Nordheim tunneling theory, we have determined the barrier heights for different layers and observed that the barrier height decreases as the number of layers increases. Using density functional theory (DFT) calculation, we successfully demonstrated that the barrier height decreases as the layer number increases. By illuminating the TMDs on a transparent ultra-flat conducting ITO substrate, we observed a reduction in current when compared to the current measured in the dark, hence demonstrating negative photoconductivity. Our study provides a fundamental understanding of the local electronic and optoelectronic behaviors of TMD-metal junction, and may pave an avenue toward developing nanoscale electronic devices with tailored layer-dependent transport properties.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to understand the influence of the number of layers of molybdenum disulfide (MoS₂) on the electronic band alignment and interface transport properties when it is in contact with metals. Specifically, the research aims to fill the following knowledge gaps:

1. **Influence of the number of MoS₂ layers on the energy band alignment**: When MoS₂ is in contact with a metal, how do its electronic bands align as the number of MoS₂ layers changes? In particular, how does the barrier height between the metal and MoS₂ change with the number of layers?

2. **Influence of different metal substrates on the properties of MoS₂**: What are the effects of different types of metal substrates (such as gold (Au) and indium tin oxide (ITO)) on the electrical and photoelectric properties of MoS₂?

3. **Explanation of the negative photoconductivity phenomenon**: Why does MoS₂ exhibit negative photoconductivity behavior under certain conditions? What is the physical mechanism of this behavior?

### Specific problem analysis

#### 1. Influence of the number of MoS₂ layers on the energy band alignment
The research measured the current changes of 1 - 5 - layer MoS₂ samples on an ultra - flat metal surface (such as Au and ITO) by conductive atomic force microscopy (CAFM), and calculated the barrier heights at different numbers of layers in combination with the Fowler - Nordheim tunneling theory. The results show that as the number of MoS₂ layers increases, the barrier height gradually decreases, which leads to an increase in current.

Formula:
\[ I(V) = A_e\frac{q^3mV^2}{8\pi h\Phi_Bd^2}\exp\left( -\frac{8\pi\sqrt{2m^*\Phi_B^{3/2}}d}{3hqV} \right) \]

where:
- \( A_e \) is the effective contact area,
- \( h \) is Planck's constant,
- \( q \) is the electron charge,
- \( d \) is the barrier thickness,
- \( \Phi_B \) is the barrier height,
- \( m \) is the electron mass,
- \( m^* \) is the effective electron mass in the semiconductor.

#### 2. Influence of different metal substrates on the properties of MoS₂
The experiment found that the performance of MoS₂ on two different substrates, Au and ITO, is different. Specifically, the barrier height of MoS₂ on the Au substrate is lower, while the barrier height on the ITO substrate is higher. This difference may be attributed to the different work functions of the two metals.

#### 3. Explanation of the negative photoconductivity phenomenon
The research also observed that when the MoS₂ sample is irradiated by blue light (460 - 490 nm), it exhibits negative photoconductivity, that is, the current decreases. This phenomenon is different from the traditional positive photoconductivity behavior and may be due to the fact that the behavior of electrons and holes after photo - excitation changes the barrier height, thereby reducing the tunneling current.

### Conclusion
Through the above research, the author reveals the interface electrical and photoelectric properties of MoS₂ when it is in contact with ultra - flat metals, providing a basis for the development of nano - scale photoelectric devices with customized transport properties.