Synthesis and Characterization of Large Area Few-layer MoS2 and WS2 Films

Yiying Wu,Zhiqiang Ji,Mingzhe Yu,Zhongjie Huang,Mingfu He,Xiaodi Ren,Tom Draskovic,Damian Beauchamp
2013-01-01
Abstract:Transition metal dichalcogenides (TMDs) bonded by a weak Van der Waals force between layers can be exfoliated to a single layer or a few layers. These ultrathin materials (less than 10 atoms thick) belong to the family of two-dimensional (2D) materials. As dimensionality reduced, 2D materials have unique heat and charge transport properties. With sizable band gaps, 2D TMDs arouse both fundamental and practical interest. However, the synthesis of orientated singleor fewlayer TMDs with large area remains challenging. Here, a facile chemical vapor-metal conversion method was employed to get (0001)-orientated MoS2 and WS2 few-layer films with large area. In addition, by inserting another metal layer into the precursor Mo layers, doped MoS2 films (e.g. Nb doped MoS2 films) were successfully synthesized by one-step chemical vapormetal conversion process. The thickness of the film was controlled by tuning the thickness of the starting metal layers. Doping density varied with the thickness of the doping metal layers. The atomic force microscopy (AFM), high resolution x-ray diffractometer (HRXRD), Raman spectroscopy and transmission electron microscopy (TEM) were used to characterize the layered TMD films. Transport properties were measured by the Hall Measurements, the Transmission Linear Measurement (TLM) and the Field-effect Transistor (FET) measurements. The pure few-layer MoS2 films were ntype and had a low background carrier concentration of ~1016 cm-3 with a high electron mobility of up to 12 cm2V-1 s-1. The Nb-doped MoS2 films were p-type and showed highly degenerate doped behavior. By decreasing the doping density, the hole mobility of Nb-doped MoS2 films increased from 0.5 cm2V-1 s-1to 8.5 cm2V-1 s-1. Moreover,
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