Abstract:In situ investigation of chemical vapor deposition (CVD) is of critical importance to understanding growth mechanisms of transition-metal dichalcogenides (TMDs) and to develop technologies for growing high-quality monolayer single crystals. However, the in situ investigation is still a great challenge in practice, because TMD CVD growth is conducted at a high temperature with a reduction environment. In this work, we developed an in situ investigation system for CVD growth and presented real-time observations of monolayer MoS2 deposition on the SiO2/Si substrate. We discovered that monolayer MoS2 should be grown via the vapor-state precursor reaction and crystallized from the prenucleation sites on a substrate, an intermediate-phase MoO2 was essential for the nucleation seeding, but the population density should be controlled, and a high-concentration S vapor promoted the in-plane epitaxial growth of MoS2; hence, it was of great benefit to obtain a high-quality monolayer with a compact shape.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.0c00231.Figure S1. Schematic representation of MoS2 CVD growth in a microfurnace; Figure S2. Sulfurization process of 2D MoO3 flakes with the thickness of 6 nm; Figure S3. Raman characterization of monolayer MoS2 grown via two modes; Figure S4. Characterization of the MoO2 film sulfurized by the high-temperature S vapor; Figure S5. High-quality monolayer MoS2 growth using the microfurnace under in situ observations (PDF)Movie S1. MoO3 sublimation (MPG)Movie S2. In situ observation of MoS2 growth (MPG)Movie S3. In situ observation of MoO2 deposition (MPG)Movie S4. Monolayer MoS2 growth vs MoO2 deposition (MPG)Movie S5. Monolayer MoS2 growth and roughing (MPG)This article has not yet been cited by other publications.

Monolayer MoS<sub>2</sub> of high mobility grown on SiO<sub>2</sub> substrate by two-step chemical vapor deposition

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Chemical Vapor Deposition Of Large-Size Monolayer Mose2 Crystals On Molten Glass

MoS2-OH Bilayer-Mediated Growth of Inch-Sized Monolayer MoS2 on Arbitrary Substrates

Controllable Growth Of Monolayer Mos2 By Chemical Vapor Deposition Via Close Moo2 Precursor For Electrical And Optical Applications

Controlled Synthesis of High-Quality Crystals of Monolayer MoS2 for Nanoelectronic Device Application

High-Temperature In Situ Investigation of Chemical Vapor Deposition to Reveal Growth Mechanisms of Monolayer Molybdenum Disulfide

Growth of wafer-scale MoS2 monolayer by magnetron sputtering.

Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition

Large‐area Growth of Monolayer MoS2 by Using Atmospheric‐pressure Chemical Vapor Deposition with Nucleation Controlling Process

Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS2.

Chemical Vapor Deposition Growth of Large-Area Monolayer MoS2 and Fabrication of Relevant Back-Gated Transistor*.

Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2

Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Scalable growth of atomically thin MoS 2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Role of Rough Substrate on the Growth of Large Single-Crystal MoS2 by Chemical Vapor Deposition

Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe2.

Chemical Vapor Deposition of High-Quality Large-Sized MoS2 Crystals on Silicon Dioxide Substrates.

Synthesis of High-Performance Monolayer Molybdenum Disulfide at Low Temperature.

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2