Abstract:In situ investigation of chemical vapor deposition (CVD) is of critical importance to understanding growth mechanisms of transition-metal dichalcogenides (TMDs) and to develop technologies for growing high-quality monolayer single crystals. However, the in situ investigation is still a great challenge in practice, because TMD CVD growth is conducted at a high temperature with a reduction environment. In this work, we developed an in situ investigation system for CVD growth and presented real-time observations of monolayer MoS2 deposition on the SiO2/Si substrate. We discovered that monolayer MoS2 should be grown via the vapor-state precursor reaction and crystallized from the prenucleation sites on a substrate, an intermediate-phase MoO2 was essential for the nucleation seeding, but the population density should be controlled, and a high-concentration S vapor promoted the in-plane epitaxial growth of MoS2; hence, it was of great benefit to obtain a high-quality monolayer with a compact shape.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.0c00231.Figure S1. Schematic representation of MoS2 CVD growth in a microfurnace; Figure S2. Sulfurization process of 2D MoO3 flakes with the thickness of 6 nm; Figure S3. Raman characterization of monolayer MoS2 grown via two modes; Figure S4. Characterization of the MoO2 film sulfurized by the high-temperature S vapor; Figure S5. High-quality monolayer MoS2 growth using the microfurnace under in situ observations (PDF)Movie S1. MoO3 sublimation (MPG)Movie S2. In situ observation of MoS2 growth (MPG)Movie S3. In situ observation of MoO2 deposition (MPG)Movie S4. Monolayer MoS2 growth vs MoO2 deposition (MPG)Movie S5. Monolayer MoS2 growth and roughing (MPG)This article has not yet been cited by other publications.

Preparation of Large Size Monolayer MoS2 by a Two-Step Heating Process by CVD

Chemical Vapor Deposition Of Large-Size Monolayer Mose2 Crystals On Molten Glass

Space-confined CVD growth of 2D-MoS<sub>2</sub> crystals with tunable dimensionality <i>via</i> adjusting growth conditions

Pattern Stimulated CVD Growth of 2D MoS2

High-Temperature In Situ Investigation of Chemical Vapor Deposition to Reveal Growth Mechanisms of Monolayer Molybdenum Disulfide

Monolayer MoS<sub>2</sub> of high mobility grown on SiO<sub>2</sub> substrate by two-step chemical vapor deposition

Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS2.

Chemical Vapor Deposition of High-Quality Large-Sized MoS2 Crystals on Silicon Dioxide Substrates.

Single Crystal Monolayer MoS2 Triangles with Wafer-Scale Spatial Uniformity by MoO3 Pre-Deposited Chemical Vapor Deposition

How to ‘train’ your CVD to grow large-area 2D materials

Wafer-Scale and Deterministic Patterned Growth of Monolayer MoS2 via Vapor-Liquid-Solid Method

Effect of MoO3 Vapor Flow to Large Area MoS2 Few-Layered Films Growth

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Controllable Growth Of Monolayer Mos2 By Chemical Vapor Deposition Via Close Moo2 Precursor For Electrical And Optical Applications

Role of Rough Substrate on the Growth of Large Single-Crystal MoS2 by Chemical Vapor Deposition

MoS2-OH Bilayer-Mediated Growth of Inch-Sized Monolayer MoS2 on Arbitrary Substrates

CVD Growth of Large–scale Hexagon-Like Shaped MoSe2 Monolayers with Sawtooth Edge

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2

Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

High Phase Purity of Large-Sized 1T'-Mos2 Monolayers with 2D Superconductivity.

Scalable growth of atomically thin MoS 2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source