Abstract:As an emerging two-dimensional (2D) semiconductor material, monolayer molybdenum disulfide (MoS2) films have a natural atomic-level thickness, excellent optoelectronic and mechanical properties, and have the potential to be used in very large-scale integration technology in the future. This article summarizes the progress made by our research group in the research of monolayer MoS2 films in the past few years. The controlled growth of large-size MoS2 single crystals has been achieved by oxygen-assisted chemical vapor deposition method. Through a unique facile multisource CVD growth method, the epitaxial growth of highly oriented and large domain size ML MoS2 films at a 4inch wafer scale is realized. Almost only 0 and 60° oriented domains are present in films, and the domain size, on average, is greater than 180 μm at the largest. The samples suggest their best optical and electrical quality ever obtained, as evidenced from their wafer-scale homogeneity, nearly perfect lattice structure, average room-temperature device mobility of ~70 cm2V?1s?1 and high on/off ratio of ~109 on SiO2 substrates. By adjusting the oxygen doping concentration of the MoS2 film with an effective CVD technique, a significant modulation on electrical and optical properties can be achieved, greatly improves carrier mobilities and controllable n-type electronic doping effects resulted from optimized oxygen doping levels of MoS2-xOx are revealed. In terms of MoS2 thin film devices and applications, the 4inch wafer-scale high-quality MoS2 monolayers are used to fabricate transparent MoS2-based transistors and logic circuits on flexible substrates. This large-area flexible FET device shows excellent electrical performance with a high device density (1,518 transistors per cm2) and yield (97%), and exhibit high on/off ratios (1010), current densities (~35μAμm?1), mobilities (~55cm2V-1s-1) and flexibility. Based on the vertically integrated multilayer devices via the layer-by-layer stacking process, an individual layer of all-2D multifunctional FETS are successfully achieved with nearly multiplied on-current density, equivalent device mobility, and persevered on/off ratio and SS of the individual layers, the combined performance of the device is fully utilized, and the integration of "sensing-storing-computing" is realized. A two-terminal floating-gate memory (2TFGM) based artificial synapse built from all-2D van der Waals materials is prepared, the 2TFGM synaptic device exhibits excellent linear and symmetric weight update characteristics with high reliability and tunability, A large number of states up to ≈3000, high switching speed of 40 ns and low energy consumption of 18 fJ for a single pulse have been demonstrated experimentally. The introduction of structural domain boundaries in the basal plane of monolayer MoS2 can greatly enhance its hydrogen evolution reaction performance by serving as active sites. The progress we have made in the preparation of monolayer MoS2 films and the research on device characteristics is of guiding significance for the basic and application research of MoS2, and is universal and instructive for other 2D transition metal dichalcogenides.

Probing the Growth Mechanisms of Vertical-Stacked and Lateral-Grown MoS2 Few Layers

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Space-confined CVD Growth of 2D-Mos2 Crystals with Tunable Dimensionality Via Adjusting Growth Conditions

Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Wafer-Scale and Deterministic Patterned Growth of Monolayer MoS2 via Vapor-Liquid-Solid Method

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure

Scalable growth of atomically thin MoS 2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Layer-dependent Chemically Induced Phase Transition of Two-dimensional MoS2.

Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

High-Temperature In Situ Investigation of Chemical Vapor Deposition to Reveal Growth Mechanisms of Monolayer Molybdenum Disulfide

Growth Mechanism of Transition Metal Dichalcogenide Monolayers: the Role of Self-Seeding Fullerene Nuclei.

Monolayer MoS<sub>2</sub> of high mobility grown on SiO<sub>2</sub> substrate by two-step chemical vapor deposition

Application-Oriented Growth of a Molybdenum Disulfide (MoS2) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition

Single‐Crystal MoS 2 Monolayer Wafer Grown on Au (111) Film Substrates

Controllable Growth of Monolayer MoS2by Chemical Vapor Deposition Via Close MoO2precursor for Electrical and Optical Applications

Growth of MoS(2(1-x))Se(2x) (x = 0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition.

A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals

Cotrollable growth of monolayer MoS2 films and the application in devices