Abstract:Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device applications requires a connection between a metal junction and a TMD semiconductor. Hence, a complete understanding of electronic band alignments and the potential barrier heights governing the transport through a metal-TMD-metal junction is critical. But, there is a knowledge gap; it is not clear how the energy bands of a TMD align while in contact with a metal as a function of the number of layers. In pursuit of removing this knowledge gap, we have performed conductive atomic force microscopy (CAFM) of few layered (1-5) MoS2 immobilized on ultra-flat conducting Au surfaces (root mean square (RMS) surface roughness <0.2 nm) and indium tin oxide (ITO) substrate (RMS surface roughness <0.7 nm) forming a vertical metal (conductive-AFM tip)-semiconductor-metal device. We have observed that the current increases as the number of layers increases up to 5 layers. By applying Fowler-Nordheim tunneling theory, we have determined the barrier heights for different layers and observed that the barrier height decreases as the number of layers increases. Using density functional theory (DFT) calculation, we successfully demonstrated that the barrier height decreases as the layer number increases. By illuminating the TMDs on a transparent ultra-flat conducting ITO substrate, we observed a reduction in current when compared to the current measured in the dark, hence demonstrating negative photoconductivity. Our study provides a fundamental understanding of the local electronic and optoelectronic behaviors of TMD-metal junction, and may pave an avenue toward developing nanoscale electronic devices with tailored layer-dependent transport properties.

Interface and Interlayer Electron/Exciton-Phonon Coupling of TMDs/InSe for Efficient Charge Transfer and Ultrafast Dynamics: Implications for Field-Effect Devices

Alleviation of Schottky barrier heights at TMDs/metal interfaces with a tunneling layer of semiconducting InSe nanoflake

Tailoring the Energy Funneling Across the Interface in InSe/MoS2 Heterostructures by Electrostatic Gating and Strain Engineering

Long-range Transport and Ultrafast Interfacial Charge Transfer in Perovskite/monolayer Semiconductor Heterostructure for Enhanced Light Absorption and Photocarrier Lifetime

Electron Transport and Device Physics in Monolayer Transition-Metal Dichalcogenides

Ultrafast Charge Transfer and Optoelectronic Performance of N-Inse/m-sns (gese) Van Der Waals Heterostructures

Asymmetric photoelectric effect: Auger-assisted hot hole photocurrents in transition metal dichalcogenides

Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure

Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T'/2H MoS2 Heterobilayers.

Preparation and optoelectronic performance of two-dimensional MoSe2/WSe2 lateral and vertical heterostructures

Interface Influence on the Photoelectric Performance of Transition Metal Dichalcogenide Lateral Heterojunctions

Charge Transfer Properties of Heterostructures Formed by Bi2O2Se and Transition Metal Dichalcogenide Monolayers

Efficient and Layer-Dependent Exciton Pumping Across Atomically Thin Organic-Inorganic Type-I Heterostructures

Charge Transfer Properties of Heterostructures Formed by Bi 2 O 2 Se and Transition Metal Dichalcogenide Monolayers

Tailoring Exciton Dynamics of Monolayer Transition Metal Dichalcogenides by Interfacial Electron-Phonon Coupling

Probing Exciton Complexes and Charge Distribution in Inkslab-Like WSe2 Homojunction.

Transport properties and photoresponse of a series of 2D transition metal dichalcogenide intercalation compounds

Ultrafast Charge Transfer in Perovskite Nanowire/2D Transition Metal Dichalcogenide Heterostructures.

Enhanced exciton diffusion from interlayer charge-transfer transitions in PtSe2/MoSe2 van der Waals heterojunction

Nonvolatile Electric Control of Exciton Complexes in Monolayer MoSe 2 with Two-Dimensional Ferroelectric CuInP 2 S 6

Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals