Ultrafast Charge Transfer and Optoelectronic Performance of N-Inse/m-sns (gese) Van Der Waals Heterostructures

Xueping Li,Xuan Qin,Lin Li,Mengjie He,Peize Yuan,Chenhai Shen,Yong Liu,Congxin Xia

DOI: https://doi.org/10.1103/physrevb.110.165409

IF: 3.7

2024-01-01

Physical Review B

Abstract:Two-dimensional van der Waals heterostructures (vdWHs) are promising candidates for multi-functional electronic and optoelectronic devices. Here, based on reconfigurable band alignment, we design n-InSe/m-SnS (GeSe) multilayer vdWHs with different layer combinations to explore their ultrafast dynamic process and optoelectronic device performance. When n > 1(3)L, the band structure transforms from staggered- into brokengap band alignment, and increasing the layer number can effectively widen the band-to-band tunneling window to achieve adjustable tunneling field-effect transistors. For the type-II InSe/GeSe vdWHs, the ultrafast electron transfer timescale reduces from 95 to 33 fs when the InSe layer number increases from 1L to 2L. Moreover, the photocurrent density of n-InSe/m-SnS (GeSe) multilayer vdWHs photodetectors can be significantly improved with layer-combination modulation, and the value of 2-InSe/1-GeSe vdWHs can be approximately increased by 12 times compared with that of 1-InSe/1-GeSe vdWHs. This research provides an effective way to design tunneling field-effect transistors and photodetectors in low-power consumption and high-speed switching.