Straddling SnSe2/SnS2 van der Waals tunneling heterostructures for high performance broadband photodetectors

Xiangna Cong,Muhammad Najeeb Ullah Shah,Wenlong He
DOI: https://doi.org/10.1039/d4tc00443d
IF: 6.4
2024-03-16
Journal of Materials Chemistry C
Abstract:Layered van der Waals 2D materials possess remarkable light-matter interaction properties and offer a broad range of tunable bandgaps through the facile fabrication of heterostructures, which have opened up numerous possibilities for applications in the field of optoelectronics. Previous research has indicated that Type-I van der Waals heterostructures hold significant promise for photodetector applications. Nevertheless, the underlying tunneling mechanisms within Type-I heterostructures have not been fully elucidated. In this study, a highly efficient photodiode based on a SnSe2/SnS2 Type-I van der Waals heterostructure was successfully fabricated, which was further validated through density functional theory calculations that explored the interlayer band structure under the influence of electric fields. A unilateral depletion region was formed on SnS2, which effectively suppressed carrier recombination at the interface. The device exhibited an ultrahigh on/off ratio of approximately 107, primarily attributed to the to the depletion effect of SnS2 and the improved interface effect of h-BN. Additionally, the device exhibited a remarkably high responsivity of 37.5 A/W and broadband detection width from ultraviolet to visible spectrum. These unique characteristics, suggest that our findings could pave the way for the development of next-generation, highly efficient optoelectronic devices.
materials science, multidisciplinary,physics, applied
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