Abstract:Two-dimensional transition metal dichalcogenides (TMDCs) have natural advantages in overcoming the short-channel effect in field-effect transistors (FETs) and in fabricating three-dimensional FETs, which benefit in increasing device density. However, so far, most reported works related to MoS2 FETs with a sub-100 nm channel employ mechanically exfoliated materials and all of the works involve electron beam lithography (EBL), which may limit their application in fabricating wafer-scale device arrays as demanded in integrated circuits (ICs). In this work, MoS2 FET arrays with a side-wall source and drain electrodes vertically distributed are designed and fabricated. The channel length of the as-fabricated FET is basically determined by the thickness of an insulating layer between the source and drain electrodes. The vertically distributed source and drain electrodes enable to reduce the electrode-occupied area and increase in the device density. The as-fabricated vertical FETs exhibit on/off ratios comparable to those of mechanically exfoliated MoS2 FETs with a nanoscale channel length under identical VDS. In addition, the as-fabricated FETs can work at a VDS as low as 10 mV with a desirable on/off ratio (1.9 × 107), which benefits in developing low-power devices. Moreover, the fabrication process is free from EBL and can be applied to wafer-scale device arrays. The statistical results show that the fabricated FET arrays have a device yield of 87.5% and an average on/off ratio of about 1.7 × 106 at a VDS of 10 mV, with the lowest and highest ones to be about 1.3 × 104 and 1.9 × 107, respectively, demonstrating the good reliability of our fabrication process. Our work promises a bright future for TMDCs in realizing high-density and low-power nanoelectronic devices in ICs.

Wafer‐Scale Demonstration of MBC‐FET and C‐FET Arrays Based on Two‐Dimensional Semiconductors

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Ultrathin Multibridge Channel Transistor Enabled by Van Der Waals Assembly.

Pass‐transistor Logic Circuits Based on Wafer‐Scale Two‐Dimensional Semiconductors

Nanoscale Channel Length MoS2 Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes

Demonstration of Vertically-stacked CVD Monolayer Channels: MoS<sub>2</sub> Nanosheets GAA-FET with I<sub>on</sub>>700 A/m and MoS<sub>2</sub>/WSe<sub>2</sub> CFET

Vertical Integration of 2D Building Blocks for All‐2D Electronics

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET

Integration of 3-level MoS$_2$ multi-bridge channel FET with 2D layered contact and gate dielectric

High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown N-Mos2 and P-Mote2.

Large-scale Chemical Assembly of Atomically Thin Transistors and Circuits

Analog and Logic Circuits Fabricated on a Wafer-Scale Two-Dimensional Semiconductor

Large-Scale Vertical 1T′/2H MoTe2 Nanosheet-Based Heterostructures for Low Contact Resistance Transistors

Scaling-up Atomically Thin Coplanar Semiconductor-Metal Circuitry via Phase Engineered Chemical Assembly

High‐Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD‐Grown n‐MoS 2 and p‐MoTe 2

Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors

High Performance Few-Layer MoS2 Transistor Arrays with Wafer Level Homogeneity Integrated by Atomic Layer Deposition

Nanoscale Channel Length MoS 2 Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance