Abstract:Well‐controlled van der Waals trilayer MoS2 is used as the semiconductor channel, which can successfully address the long‐standing issue of performance degradation from physical‐vapor deposited metal contact, leading to the demonstration of high‐speed MoS2 transistors with a high drain current (589 μA μm−1 at Vds = 1 V) as well as record‐high saturation velocity (4.2 × 106 cm s−1) at room temperature. Two‐dimensional MoS2 field‐effect transistors (FETs) have great potential for next‐generation electronics due to their excellent electronic properties with an atomic thin channel. However, multiple challenges exist for the monolayer MoS2 channel, including interface scattering and ohmic contact. In this work, well‐controlled trilayer MoS2 with high mobility and large single crystals is successfully grown on soda‐lime glass substrates using chemical vapor deposition (CVD), with a lateral size of up to 148 μm, which is the largest reported size to date. A record high on/off ratio of ≈1012 and a high carrier mobility of 62 cm2 V−1 s−1 of trilayer MoS2 FETs are demonstrated, showing notable advantages compared with the monolayer counterpart. The long‐standing issue of monolayer MoS2 performance degradation from physical vapor deposited metal contact can be mitigated by the trilayer MoS2 channel, achieving the lowest contact resistance of 350 Ω μm using the common method of e‐beam evaporated Ni. Moreover, 40‐nm channel‐length trilayer MoS2 FETs using ultrathin HfLaO dielectrics exhibit a high current of 589 μA μm−1 at a supply voltage of 1 V at room temperature, which increases to 1162 μA μm−1 at 4.3 K, the highest among those using commonly evaporated metal. Record high electron saturation velocity of 4.2 × 106 cm s−1 can be achieved at room temperature.

Demonstration of Vertically-stacked CVD Monolayer Channels: MoS<sub>2</sub> Nanosheets GAA-FET with I<sub>on</sub>>700 A/m and MoS<sub>2</sub>/WSe<sub>2</sub> CFET

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

Nanoscale Channel Length MoS2 Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes

Wafer‐Scale Demonstration of MBC‐FET and C‐FET Arrays Based on Two‐Dimensional Semiconductors

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Quasi-1-Dimensional Dual-Gate MoS 2 Field-Effect Transistors with 50 nm Channel Length

Top-Gate CVD WSe2 pFETs with Record-High I-d similar to 594 mu A/mu m, G(m)similar to 244 mu S/mu m and WSe2/MoS2 CFET based Half-adder Circuit Using Monolithic 3D Integration

High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact

High-performance monolayer MoS 2 nanosheet GAA transistor

Top-Gate CVD WSe2 Pfets with Record-High Id~594 Μa/μm, Gm~244 Μs/μm and WSe2/MoS2 CFET Based Half-adder Circuit Using Monolithic 3D Integration

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs With Matched $\textit{V}_{\text{T}}$ by Band Alignments of Individual Channels

Van der Waals Epitaxial Trilayer MoS2 Crystals for High‐Speed Electronics

Nanoscale Channel Length MoS 2 Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes

Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films

Top-Gate CVD WSe<inf>2</inf> pFETs with Record-High I<inf>d</inf>~594 μA/μm, G<inf>m</inf>~244 μS/μm and WSe<inf>2</inf>/MoS<inf>2</inf> CFET based Half-adder Circuit Using Monolithic 3D Integration

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

Van der Waals Epitaxial Trilayer MoS<sub>2</sub> Crystals for High-Speed Electronics

Two-Dimensional Vertical Transistor with One-Dimensional van der Waals Contact

Demonstration of Vertically-stacked CVD Monolayer Channels: MoS<sub>2</sub> Nanosheets GAA-FET with I<sub>on</sub>&gt;700 A/m and MoS<sub>2</sub>/WSe<sub>2</sub> CFET