Abstract:The short‐channel tunneling transistor comprising all 2D components is developed, exhibiting high switching performance due to the energy band modulation of vertical heterojunction through the dual‐gates. Leveraging the unique short‐channel and tunneling mechanism, it can circumvent the general issues of voltage spikes and long reverse recovery time, realizing an access to high‐frequency integrated circuits (IC) interface. With continuous size scaling, the surface dangling bonds and short‐channel effects will degrade silicon based transistor performance. Thus, it is of great importance to seek new channel materials and transistor architectures to further continue Moore's law. Herein, a new ultra‐thin short‐channel tunneling transistor is developed comprising all 2D‐ components. Distinct from usual 2D planar transistor, this device is configured with vertical MoS2/WSe2 junction and in‐plane WSe2 channel, the switch states are realized by the gate‐regulated barrier height of heterojunction, enabling the transition of transport mechanism between thermionic‐emission and tunneling. Under dual‐gate configuration, the transistor exhibits high performance with drive current of 4.58 μA, on/off ratio of 4 × 107, subthreshold swing (SS) of 97 mV decade−1 and drain‐induced barrier lowering (DIBL) of 12 mV V−1, that can meet the requirement of logical applications in integrated circuits (IC). Taking advantage of the high‐speed tunneling current and unique short‐channel architecture, the device overcomes the issues of voltage spikes and long reverse recovery time that exist in usual electric components, and thus gains an access to the IC interface. This work provides a proof‐of‐concept transistor architecture relying on dual‐gate modulation, opening up a promising perspective for next generation low‐power, high‐density, and large‐scale IC technologies.

Two-Dimensional Vertical Transistor with One-Dimensional van der Waals Contact

Ultrashort Vertical‐Channel van der Waals Semiconductor Transistors

Carbon-Nanotube-Confined Vertical Heterostructures with Asymmetric Contacts

One-dimensional semimetal contacts to two-dimensional semiconductors

Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures

Vertical WS2/SnS2 Van Der Waals Heterostructure for Tunneling Transistors.

Large-Scale Vertical 1T′/2H MoTe2 Nanosheet-Based Heterostructures for Low Contact Resistance Transistors

Two dimensional semiconducting materials for ultimately scaled transistors

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

Large-scale sub-5-nm vertical transistors by van der Waals integration

Comprehensive Insights into Effect of Van Der Waals Contact on Carbon Nanotube Network Field-Effect Transistors

Nanoscale Channel Length MoS 2 Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

Ultrathin Multibridge Channel Transistor Enabled by Van Der Waals Assembly.

High‐Density Vertical Transistors with Pitch Size Down to 20 nm

Nanoscale Channel Length MoS2 Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes

Quasi-1-Dimensional Dual-Gate MoS 2 Field-Effect Transistors with 50 nm Channel Length

Complementary Two-Dimensional Vertical Transistors through Lamination with a van der Waals Metal

2D Short‐Channel Tunneling Transistor Relying on Dual‐Gate Modulation for Integrated Circuits Application

Vertical C-Shaped-Channel Nanosheet FETs Featured With Precise Control of Both Channel-Thickness and Gate-Length

Demonstration of Vertically-stacked CVD Monolayer Channels: MoS<sub>2</sub> Nanosheets GAA-FET with I<sub>on</sub>>700 A/m and MoS<sub>2</sub>/WSe<sub>2</sub> CFET