Abstract:Understanding the effect of short channels on the performance of field‐effect transistors (FETs) from emerging low‐dimensional semiconductors is crucial to estimate their suitability in high‐density integrated circuits. To this end, intricate and costly equipment capable of nanoscale photolithography or e‐beam lithography is usually required to fabricate FETs with shrinking channel lengths. Here, the authors propose an economical suspended nanofiber lithography technique with short‐channel processing capability, and compatibility with modern semiconductor foundries. By combining the merits of the near‐field electrohydrodynamic printing of nanofibers and microscale photolithographic process, the authors successfully fabricate short channels with lengths as small as 48 nm via masks of suspended nanofibers, whose diameters are easily tuned by adjusting the printing conditions. This technique is further applied for exploring the performance of short‐channel FETs using semiconductors such as single‐walled carbon nanotubes or electrochemically‐exfoliated MoS2. Their performance is comparable to those made from more demanding lithography methods. This economical nanofabrication technique is promising to be applied on a variety of semiconductors for highly integrated fabrication of submicron short‐channel device arrays. A scalable and economical nanofabrication technique is developed by combining the near‐field electrohydrodynamic printing of suspended nanofibers with photolithographic processes, and is further exploited for studying the performances of short‐channel field‐effect transistors based on carbon nanotubes or MoS2. This approach is promising to be applied on a variety of semiconductors for the highly integrated fabrication of submicron short‐channel device arrays.

High‐Density Vertical Transistors with Pitch Size Down to 20 nm

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

Large-scale sub-5-nm vertical transistors by van der Waals integration

Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures

Ultrashort Vertical‐Channel van der Waals Semiconductor Transistors

Two-Dimensional Vertical Transistor with One-Dimensional van der Waals Contact

Deep-submicron Graphene Field-Effect Transistors with State-of-Art Fmax

Computational Study of Graphene-Based Vertical Field Effect Transistor

High-density vertical sidewall MoS2 transistors through T-shape vertical lamination

Realizing On/Off Ratios over >10 4 for Sub-2 nm Vertical Transistors

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Large‐Scale Vertically Interconnected Complementary Field‐Effect Transistors Based on Thermal Evaporation

Quantum capacitance limited vertical scaling of graphene field-effect transistor.

Highly Flexible Electronics from Scalable Vertical Thin Film Transistors

Low-dimensional materials-based field-effect transistors

Drain-engineered Carbon-Nanotube-film Field-Effect Transistors with High Performance and Ultra-Low Current Leakage

Scalable Submicron Channel Fabrication by Suspended Nanofiber Lithography for Short‐Channel Field‐Effect Transistors

Device performance limit of in-plane monolayer VTe2/WTe2 heterojunction-based field-effect transistors

High-frequency self-aligned graphene transistors with transferred gate stacks

Scaling of MoS2 Transistors and Inverters to Sub-10 Nm Channel Length with High Performance