Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Cnt Based Mechanical Devices for Ulsi Memory

Nanoelectromechanical DRAM for Ultra-Large-scale Integration (ULSI)

NEMS Based Logic and Memory Circuits

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Nanotube Based Vertical Nano-Devices For High Integration Density

Nanoelectromechanical Switches with Vertically Aligned Carbon Nanotubes

Ferroelectric-carbon Nanotube Memory Devices.

Design and modelling of different SRAM's based on CNTFET 32nm technology

Crystal That Remembers: Several Ways to Utilize Nanocrystals in Resistive Switching Memory

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

Modeling and Simulation of RRAM with Carbon Nanotube Electrode

Carbon Nanotube Based Non-Volatile Memory and Charge Sensors

A Novel CNFET SRAM-Based Compute-In-Memory for BNN Considering Chirality and Nanotubes

Bi-layer Resistive Switching Memory Using Aligned SWCNTs As Electrodes

Memory Switching and Threshold Switching in a 3D Nanoscaled NbO X System

High‐Performance and Radiation‐Hard Carbon Nanotube Complementary Static Random‐Access Memory

Monolithic 3D Carbon Nanotube Memory for Enhanced Yield and Integration Density

Nanoscale resistive switching devices for memory and computing applications

A Flexible Carbon Nanotube Sen‐Memory Device

Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array.

Novel 2D Materials-based Resistive Devices