Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Carbon Nanotube Based Non-Volatile Memory and Charge Sensors

Carbon Nanotube-Based Nonvolatile Memory with Charge Storage in Metal Nanocrystals

Carbon Nanotube Memory by the Self-Assembly of Silicon Nanocrystals As Charge Storage Nodes

High Sensitivity and Nonlinearity of Carbon Nanotube Charge-Based Sensors

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Ferroelectric-carbon Nanotube Memory Devices.

Memory Effects of Carbon Nanotube-Based Field Effect Transistors

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

Electrostatically Telescoping Nanotube Nonvolatile Memory Device

Memory Effects of Carbon Nanotubes As Charge Storage Nodes for Floating Gate Memory Applications

Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors

NEMS Based Logic and Memory Circuits

Non-Volatile Organic Memory Elements Based on Carbon-Nanotube-Enabled Vertical Field-Effect Transistors

A Carbon Nanotube Non-Volatile Memory Device Using a Photoresist Gate Dielectric

Nonvolatile Memory from Single-Walled Carbon Nanotube-Based Field Effect Transistors

A Flexible Carbon Nanotube Sen‐Memory Device

Cnt Based Mechanical Devices for Ulsi Memory

Monolithic 3D Carbon Nanotube Memory for Enhanced Yield and Integration Density

Carbon Nanotube Transistor with Short-Term Memory

Carbon Nanotube SRAM in 5-Nm Technology Node Design, Optimization, and Performance Evaluation—Part II: CNT Interconnect Optimization

Carbon nanomaterials for non-volatile memories