Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Narrow Channel MOSFET Memory Based on Silicon Nanocrystals and Charge Storage Characteristics

Characteristics of Narrow Channel Mosfet Memory Based on Silicon Nanocrystals

Charging Characteristics of MOSFET Memory Based on Si Nanocrystals

Silicon Nano-Crystals Based Mos Memory and Effects of Traps on Charge Storage Characteristics

Operation of Nanocrystalline-Silicon-based Few-Electron Memory Devices in the Light of Electron Storage, Ejection, and Lifetime Characteristics

Performance and reliability feature of nanocrystal memory devices

Numerical Investigation of Characteristics of P-Channel Ge/Si Hetero-Nanocrystal Memory

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

The Development of Nanometer Solid State Storage Memory

GeSi/Si Hetero‐nanocrystals and the Applications in MOSFET Memories

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

Carbon Nanotube Based Non-Volatile Memory and Charge Sensors

Superior Endurance Performance Of Nonvolatile Memory Devices Based On Discrete Storage In Surface-Nitrided Si Nanocrystals

Optimization of Silicon Nanocrystals Growth Process by Low Pressure Chemical Vapor Deposition for Non-Volatile Memory Application

p-Channel Ge/Si Hetero-Nanocrystal Based MOSFET Memoryand Its Logic Array

Carbon Nanotube-Based Nonvolatile Memory with Charge Storage in Metal Nanocrystals

Large Storage Window in A-Sinx/Nc-Si/A-Sinx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Charge Storage in Nitrided Nanocrystalline Silicon Dots

Room-Temperature Si Single-Electron Memory Fabricated By Nanoimprint Lithography

Performance and Retention Characteristics of Nanocrystalline Si Floating Gate Memory with an Al2O3 Tunnel Layer Fabricated by Plasma-Enhanced Atomic Layer Deposition