Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Operation of Nanocrystalline-Silicon-based Few-Electron Memory Devices in the Light of Electron Storage, Ejection, and Lifetime Characteristics

Evidence of Electron Trapping and Emission in Nanocrystalline-Si Based Memory Device

Observation of Quantum Confinement Effects in Nanocrystalline Silicon Dot Floating Gate Single Electron Memory Devices

Toward Long-Term Retention-Time Single-Electron-memory Devices Based on Nitrided Nanocrystalline Silicon Dots

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Narrow Channel MOSFET Memory Based on Silicon Nanocrystals and Charge Storage Characteristics

C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure

Quantum Confinement Energy in Nanocrystalline Silicon Dots from High-Frequency Conductance Measurement

The Development of Nanometer Solid State Storage Memory

Charge Storage and Electron/light Emission Properties of Silicon Nanocrystals

Performance and reliability feature of nanocrystal memory devices

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Characteristics of Narrow Channel Mosfet Memory Based on Silicon Nanocrystals

Superior Endurance Performance Of Nonvolatile Memory Devices Based On Discrete Storage In Surface-Nitrided Si Nanocrystals

Simulation of Electron Storage in Ge/Si Hetero-Nanocrystal Memory

Modeling and Simulation for the Enhancement of Electron Storage in A Stacked Multilayer Nanocrystallite Silicon Floating Gate Memory

Room-Temperature Si Single-Electron Memory Fabricated By Nanoimprint Lithography

Carbon Nanotube-Based Nonvolatile Memory with Charge Storage in Metal Nanocrystals

Charge Storage in Nitrided Nanocrystalline Silicon Dots