Evidence of Electron Trapping and Emission in Nanocrystalline-Si Based Memory Device

Souri Banerjee,Shaoyun Huang,Shunri Oda
2002-01-01
Abstract:Introduction: A meaningful description of a memory device essentially demands fabrication of a short channel where the active area would contain a handful of nc-Si dots with a narrow and well-defined size distribution to overcome the challenge of reproducibility involving difficulties in the analysis. Recently, Hinds et al. reported fabrication of a narrow channel single electron memory device (SEMD) with one nc-Si dot in the active region and its operation at room temperature was successfully demonstrated. Here we present evidence of trapping of two electrons and erasing of one in a similar SEMD at 77 K with more than one nc-Si dot in the active region. The life times of the single electron as well as when there are two electrons in the nc-Si dot are also investigated.
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