Abstract:The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot formation and spin blockade in CMOS foundry-compatible devices are encouraging, but results are yet to match the control of individual electrons demonstrated in university-fabricated multi-gate designs. We show here that the charge state of quantum dots formed in a CMOS nanowire device can be sensed by using floating gates to electrostatically couple it to a remote single electron transistor (SET) formed in an adjacent nanowire. By biasing the nanowire and gates of the remote SET with respect to the nanowire hosting the quantum dots, we controllably form ancillary quantum dots under the floating gates, thus enabling the demonstration of independent control over charge transitions in a quadruple (2x2) quantum dot array. This device overcomes the limitations associated with measurements based on tunnelling transport through the dots and permits the sensing of all charge transitions, down to the last electron in each dot. We use effective mass theory to investigate the necessary optimization of the device parameters in order to achieve the tunnel rates required for spin-based quantum computation.

Quantum Confinement Energy in Nanocrystalline Silicon Dots from High-Frequency Conductance Measurement

Observation of Quantum Confinement Effects in Nanocrystalline Silicon Dot Floating Gate Single Electron Memory Devices

C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Charge Storage and Electron/light Emission Properties of Silicon Nanocrystals

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

Size-Dependent Resonant Tunneling and Storing of Electrons in A Nanocrystalline Silicon Floating-Gate Double-Barrier Structure

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Charge Storage in Nitrided Nanocrystalline Silicon Dots

Operation of Nanocrystalline-Silicon-based Few-Electron Memory Devices in the Light of Electron Storage, Ejection, and Lifetime Characteristics

Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

Temperature and Frequency Dependencies of Charging and Discharging Properties in Mos Memory Based on Nanocrystalline Silicon Dot

RESONANT TUNNELING AND COULOMB BLOCKADE IN A NANOCRYSTALLINE Si DOUBLE-BARRIER FLOATING-GATE STRUCTURE

Charging and Coulomb Blockade Effects in Nanocrystalline Si Dots Embedded in SiO/sub 2/ Matrix

Interface states and nc-Si dots induced charging/discharging effects in floating gate MOS structures

Self-Consistent Simulation of Quantum Dot Flash Memory Device with Sio2 and Hfo2 Dielectrics

The Periodicity Effect on the Charge Storage Characteristic of Multistacked Nc-Si Floating Gate.

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Electron and hole charging effect of nanocrystalline silicon in double-oxide barrier structure

Evidence of Electron Trapping and Emission in Nanocrystalline-Si Based Memory Device