Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

Huang Jian,Chen Kun-Ji,Fang Zhong-Hui,Guo Si-Hua,Wang Xiang,Ding Hong-Lin,Li Wei,Huang Xin-Fan
DOI: https://doi.org/10.1088/0256-307x/26/3/037301
2009-01-01
Abstract:The nanocrystal-Si quantum dot (nc-Si QD) floating gate MOS structure is fabricated by using plasma-enhanced chemical vapour deposition (PECVD) and furnace oxidation technology. The capacitance hysteresis in capacitance-voltage (C - V) measurements confirm the charging effect of nc-Si QDs. Asymmetric charging current peaks both for electrons and holes have been observed in current-voltage (I - V) measurements at room temperature for the first time. The characteristic and the origin of these current peaks in this nc-Si QD MOS structure is investigated systematically. Moreover, the charge density (10(-7) C/cm(2)) calculated from the charging current peaks in the I - V measurements at different sweep rates shows that each quantum dot is charged by one carrier. The difference of charging threshold voltages between the electrons and holes charging peaks, Delta V-G, can be explained by the quantum confinement effect of the nc-Si dots in size of about 3.5 nm.
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