Abstract:In this paper, we report direct experimental evidence of collective single electron effects in a single layer Si quantum dot sSi-QDd array at room temperature. The unique peak structure, observed in both the I-V and the capacitance-voltage sC-Vd characteristics, differs remarkably from the peaks and the staircase structures reported for the case of an individual quantum dot and reveals the collective Coulomb blockade and the quantum confinement effects in the weakly coupled Si-QD array. Simple theoretical estimations have been made to interpret the origin of the unique peak structure. Moreover, the number of charged electrons for each peak calculated from the underlying area of the peaks both in the I-V safter subtracting the background currentd and the C-V characteristics is found to be consistent with the number of coupled quantum dots under the electrode. This good agreement supports the assumption that each peak in the characteristics corresponds to a collective charging process of single electron into a subband in the Si-QD array arising from the weakly interdot coupling. This collective single electron effect in Si-QD array is important for its future application in the nanoelectronic devices.

CHARGING DYNAMICS OF Si-QUANTUM DOTS IN TUNNEL CAPACITOR

Dynamics of Tunneling into Charge-Tunable Si Quantum Dots

Charging and Coulomb Blockade Effects in Nanocrystalline Si Dots Embedded in SiO/sub 2/ Matrix

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Size-Dependent Resonant Tunneling and Storing of Electrons in A Nanocrystalline Silicon Floating-Gate Double-Barrier Structure

Wide-band capacitance measurement on a semiconductor double quantum dot for studying tunneling dynamics

Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

Collective Behavior of Single Electron Effects in a Single Layer Si Quantum Dot Array at Room Temperature

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

Coupling Induced Subband Structures And Collective Single Electron Behavior In A Single Layer Si Quantum Dot Array

Room Temperature Resonant Tunneling and Negative Differential Resistance Effects in a Self-Assembed Si Quantum Dot Array

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO 2 Barriers

Strongly correlated charge transport in silicon MOSFET quantum dots

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO2

Interface states and nc-Si dots induced charging/discharging effects in floating gate MOS structures

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO<sub>2</sub>

Quantum Confinement Energy in Nanocrystalline Silicon Dots from High-Frequency Conductance Measurement

Capacitance–voltage Study of SiO2/nanocrystalline Silicon/sio2 Double-Barrier Structures

Characterization of individual charge fluctuators in Si/SiGe quantum dots

Spin and Charge Oscillations of A Dot Due to Interaction with Itinerant Electrons