Coupling Induced Subband Structures And Collective Single Electron Behavior In A Single Layer Si Quantum Dot Array

l w yu,k j chen,l c wu,jun xu,wenzhong li,x f huang
DOI: https://doi.org/10.1063/1.2359205
IF: 2.877
2006-01-01
Journal of Applied Physics
Abstract:We report a study on the coupling induced subband structures and the collective single electron behavior in a single layer Si quantum dot (Si-QD) array, which is fabricated by a layer-by-layer technique using hydrogen diluted silane gas in plasma enhanced chemical vapor deposition system. Unique peak structures are observed in both the I-V and the capacitance-voltage (C-V) characteristics. The total number of electrons charged into the Si-QD array is found to be the same as the number of coupled quantum dots under the electrode. This phenomenon originates from a collective charging behavior of electrons into the subband structures in the Si-QD array, which evolved from the discrete energy levels in the individual Si QDs due to the weak interdot coupling. The different coupling and retention properties for the s-state and p-state subbands as well as the mechanisms for the charging and redistribution of electrons among the subbands are analyzed and discussed.
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