Abstract:The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot formation and spin blockade in CMOS foundry-compatible devices are encouraging, but results are yet to match the control of individual electrons demonstrated in university-fabricated multi-gate designs. We show here that the charge state of quantum dots formed in a CMOS nanowire device can be sensed by using floating gates to electrostatically couple it to a remote single electron transistor (SET) formed in an adjacent nanowire. By biasing the nanowire and gates of the remote SET with respect to the nanowire hosting the quantum dots, we controllably form ancillary quantum dots under the floating gates, thus enabling the demonstration of independent control over charge transitions in a quadruple (2x2) quantum dot array. This device overcomes the limitations associated with measurements based on tunnelling transport through the dots and permits the sensing of all charge transitions, down to the last electron in each dot. We use effective mass theory to investigate the necessary optimization of the device parameters in order to achieve the tunnel rates required for spin-based quantum computation.

Collective Behavior of Single Electron Effects in a Single Layer Si Quantum Dot Array at Room Temperature

Coupling Induced Subband Structures And Collective Single Electron Behavior In A Single Layer Si Quantum Dot Array

Can Single Electron Effects Be Directly Observed in Si Quantum Dots Array at Room Temperature?

Coulomb blockade induced negative differential resistance effect in a self-assembly Si quantum dots array at room temperature

Room Temperature Resonant Tunneling and Negative Differential Resistance Effects in a Self-Assembed Si Quantum Dot Array

Charging and Coulomb Blockade Effects in Nanocrystalline Si Dots Embedded in SiO/sub 2/ Matrix

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

CHARGING DYNAMICS OF Si-QUANTUM DOTS IN TUNNEL CAPACITOR

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Single-electron Quantum Dot in Si/SiGe with Integrated Charge-Sensing

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO 2 Barriers

The Effect of Surface Conductance on Lateral Gated Quantum Devices in Si/Sige Heterostructures

Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors

Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

Electron localization and resonant tunneling in uniform nanocrystalline silicon quantum dot systems

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO2

Disorder-induced valley-orbit hybrid states in Si quantum dots

Valley splitting of single-electron Si MOS quantum dots

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO<sub>2</sub>

Electric field dependence of spin qubit in a Si-MOS quantum dot