Abstract:Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method, followed by thermal annealing to form the Si nanocrystals (Si-NCs) embedded in SiNx floating gate MOS structures. The capacitance-voltage (C-V), current-voltage (I-V), and admittance-voltage (G-V) measurements are used to investigate the charging characteristics. It is found that the maximum flat band voltage shift (Delta V-FB) due to full charged holes (similar to 6.2 V) is much larger than that due to full charged electrons (similar to 1 V). The charging displacement current peaks of electrons and holes can be also observed by the I-V measurements, respectively. From the G-V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the SiO2/Si-substrate interface. Combining the results of C-V and G-V measurements, we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism. The evolution of G-V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.

Charging and Coulomb Blockade Effects in Nanocrystalline Si Dots Embedded in SiO/sub 2/ Matrix

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO 2 Barriers

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO<sub>2</sub>

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO2

Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at Room Temperature

Charging and Coulomb Blockade Effects of the Nc-Si Embedded in SiNx Double-Barrier Structures

Size-Dependent Resonant Tunneling and Storing of Electrons in A Nanocrystalline Silicon Floating-Gate Double-Barrier Structure

Observation of Ionic Coulomb Blockade in Nanopores.

Coulomb Blockade Effect of Carriers in nc-Si Embedded in Ultrathin SiO2 Films

Structural characterization and Coulomb blockade of a-SiN x / nanocrystalline Si /a-SiN x asymmetric double-barrier structures

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

Electron and hole charging effect of nanocrystalline silicon in double-oxide barrier structure

RESONANT TUNNELING AND COULOMB BLOCKADE IN A NANOCRYSTALLINE Si DOUBLE-BARRIER FLOATING-GATE STRUCTURE

Capacitance–voltage Study of SiO2/nanocrystalline Silicon/sio2 Double-Barrier Structures

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Interface states and nc-Si dots induced charging/discharging effects in floating gate MOS structures

Different Charging Behaviors Between Electrons and Holes in Si Nanocrystals Embedded in SiN X Matrix by the Influence of Near-Interface Oxide Traps

CHARGING DYNAMICS OF Si-QUANTUM DOTS IN TUNNEL CAPACITOR

Can Single Electron Effects Be Directly Observed in Si Quantum Dots Array at Room Temperature?

Classical Coulomb Blockade of A Silicon Nanowire Dot

Resonant Tunnelling and Storage of Electrons in Si Nanocrystals Within A-Sin X /Nc-Si/a-sin X Structures