Abstract:Charge injection and transportation process is a fundamental problem to Si nanocrystals (Si-ncs) based electric and photonic devices. In the manuscript, a single layer of Si-ncs sandwiched by amorphous Si carbide (a-SiC) was prepared by excimer laser annealing of a-SiC/a-Si/a-SiC multilayers, and the charging effect was then characterized by Kelvin probe force microscopy (KPFM) on the microscopic scale. Opposite charges were injected into Si-ncs through the biased tip and formed a core-ring or up-down shaped distribution. The decay characteristics showed that these opposite charges would not only vertically tunnel through the bottom a-SiC layer to substrate but also laterally transport and recombine with each other driven by the attractive Coulomb force. Besides, the charge retention time was also found dependent on the injection biases, which is tentatively ascribed to the charge trapping by the Si-ncs/a-SiC interface states under high bias scanning. The analysis was further supported by conductive atomic force microscopy (CAFM) measurement, in which the current-voltage curves gradually shifted during the repetition test, probably because of bias screening by the trapped charges at these interface states.

Charging and Coulomb Blockade Effects of the Nc-Si Embedded in SiNx Double-Barrier Structures

Structural characterization and Coulomb blockade of a-SiN x / nanocrystalline Si /a-SiN x asymmetric double-barrier structures

Electron and hole charging effect of nanocrystalline silicon in double-oxide barrier structure

Charging and Coulomb Blockade Effects in Nanocrystalline Si Dots Embedded in SiO/sub 2/ Matrix

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO 2 Barriers

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO2

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO<sub>2</sub>

Electron Tunneling in Nc-Si/A-Sio2 Double-Barrier Diode

Resonant Tunnelling and Storage of Electrons in Si Nanocrystals Within A-Sin X /Nc-Si/a-sin X Structures

Coulomb Blockade Effect of Carriers in nc-Si Embedded in Ultrathin SiO2 Films

Tunnelling and Storage of Charges in A-Sinx/Nc-Si/A-Sinx Structures

Formation and Charging Effect of Si Nanocrystals in A-Sinx/a-si/a-sinx Structures

The Charge Storage of the Nc-Si Layer

RESONANT TUNNELING AND COULOMB BLOCKADE IN A NANOCRYSTALLINE Si DOUBLE-BARRIER FLOATING-GATE STRUCTURE

Capacitance–voltage Study of SiO2/nanocrystalline Silicon/sio2 Double-Barrier Structures

Different Charging Behaviors Between Electrons and Holes in Si Nanocrystals Embedded in SiN X Matrix by the Influence of Near-Interface Oxide Traps

Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at Room Temperature

Size-Dependent Resonant Tunneling and Storing of Electrons in A Nanocrystalline Silicon Floating-Gate Double-Barrier Structure

Double-level Charge Storage in Self-Aligned Doubly-Stacked Si Nanocrystals in SiN X Dielectric

Microscopic Observation of Lateral and Vertical Charge Transportation in Si Nanocrystals Sandwiched by Amorphous SiC Layers

Charge storage in Si-nanocrystals embedded NOS structure characterized by Kelvin probe force microscopy