Abstract:Si quantum dots in SiO(2)/Si(3)N(4) hybrid matrix on quartz substrates were fabricated by magnetron sputtering of alternating silicon rich oxide and Si(3)N(4) layers followed by different post-deposition anneals. X-ray diffraction results indicate that the average dimension of the Si QDs ranges from 1.6 to 5.2 nm. The size and crystallisation of the Si nanocrystals are dependent on a number of factors, including the annealing condition, the SRO thickness and the Si(3)N(4) barrier thickness, as evidenced in XRD and Raman measurements. In particular, thicker Si(3)N(4) barrier layers seem to be able to suppress the growth of Si nanocrystals more effectively. PL measurements indicate that the apparent bandgap of the samples investigated in this work is in the range 1.12-1.67 eV, which demonstrates the effect of quantum confinement. More interestingly, analysis of the PL data reveals that the PL peak energy does not only depend on the size of the nanocrystals, but also affected by other details of the nanocrystal formation. A simple core-shell model is constructed to illustrate our explanation. These findings offer a preliminary understanding of the nanocrystal growth and radiative recombination processes in this newly synthesized material.

Formation and Charging Effect of Si Nanocrystals in A-Sinx/a-si/a-sinx Structures

The Charge Storage of the Nc-Si Layer

Sandwich-Lithiation and Longitudinal Crack in Amorphous Silicon Coated on Carbon Nanofibers

Resonant Tunnelling and Storage of Electrons in Si Nanocrystals Within A-Sin X /Nc-Si/a-sin X Structures

Double-level Charge Storage in Self-Aligned Doubly-Stacked Si Nanocrystals in SiN X Dielectric

Tunnelling and Storage of Charges in A-Sinx/Nc-Si/A-Sinx Structures

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Charging and Coulomb Blockade Effects of the Nc-Si Embedded in SiNx Double-Barrier Structures

Electronic Properties of Nanocrystalline-Si Embedded in Asymmetric Ultrathin Sio2 by In-Situ Fabrication Technique

Microscopic Observation of Lateral and Vertical Charge Transportation in Si Nanocrystals Sandwiched by Amorphous SiC Layers

Structural characterization and Coulomb blockade of a-SiN x / nanocrystalline Si /a-SiN x asymmetric double-barrier structures

Electronic Properties and Charge Storage Effect of Amorphous SiN Passivated Nanocrystalline Silicon

Charging Effect in Silicon Nanocrystals Observed by Electrostatic and Kelvin-probe Force Microscopy

Different Charging Behaviors Between Electrons and Holes in Si Nanocrystals Embedded in SiN X Matrix by the Influence of Near-Interface Oxide Traps

Charge storage in Si-nanocrystals embedded NOS structure characterized by Kelvin probe force microscopy

Large Storage Window in A-Sinx/Nc-Si/A-Sinx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

Optical Absorption and Charging Effect in Nano-Crystalline Ge/SiNx Multilayers

Nanoscale Quantification of Charge Injection and Transportation Process in Si-nanocrystal Based Sandwiched Structure.

Large Storage Window in a-SiN <sub> <i>x</i> </sub> /nc-Si/a-SiN <sub> <i>x</i> </sub> Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

The Constrained Growth and Patterned Distribution of Nc-Si from A-Sinx/a-si:H/a-sinx: Mechanism and Experiments