Abstract:Charge injection and transportation process is a fundamental problem to Si nanocrystals (Si-ncs) based electric and photonic devices. In the manuscript, a single layer of Si-ncs sandwiched by amorphous Si carbide (a-SiC) was prepared by excimer laser annealing of a-SiC/a-Si/a-SiC multilayers, and the charging effect was then characterized by Kelvin probe force microscopy (KPFM) on the microscopic scale. Opposite charges were injected into Si-ncs through the biased tip and formed a core-ring or up-down shaped distribution. The decay characteristics showed that these opposite charges would not only vertically tunnel through the bottom a-SiC layer to substrate but also laterally transport and recombine with each other driven by the attractive Coulomb force. Besides, the charge retention time was also found dependent on the injection biases, which is tentatively ascribed to the charge trapping by the Si-ncs/a-SiC interface states under high bias scanning. The analysis was further supported by conductive atomic force microscopy (CAFM) measurement, in which the current-voltage curves gradually shifted during the repetition test, probably because of bias screening by the trapped charges at these interface states.

Tunnelling and Storage of Charges in A-Sinx/Nc-Si/A-Sinx Structures

Resonant Tunnelling and Storage of Electrons in Si Nanocrystals Within A-Sinx/Nc-Si/A-Sinx Structures

The Charge Storage of the Nc-Si Layer

Formation and Charging Effect of Si Nanocrystals in A-Sinx/a-si/a-sinx Structures

Charging and Coulomb Blockade Effects of the Nc-Si Embedded in SiNx Double-Barrier Structures

Characteristics of I(A-Si-H)/N+(Mc-Si-H) Junctions and Electron-Transport in P-Doped Mc-Si-H Films

Structural characterization and Coulomb blockade of a-SiN x / nanocrystalline Si /a-SiN x asymmetric double-barrier structures

Large Storage Window in A-Sinx/Nc-Si/A-Sinx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

Double-level Charge Storage in Self-Aligned Doubly-Stacked Si Nanocrystals in SiN X Dielectric

Large Storage Window in a-SiN <sub> <i>x</i> </sub> /nc-Si/a-SiN <sub> <i>x</i> </sub> Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

Charge storage in Si-nanocrystals embedded NOS structure characterized by Kelvin probe force microscopy

Sandwich-Lithiation and Longitudinal Crack in Amorphous Silicon Coated on Carbon Nanofibers

Different Charging Behaviors Between Electrons and Holes in Si Nanocrystals Embedded in SiN X Matrix by the Influence of Near-Interface Oxide Traps

Tunneling induced electron transfer in SiNx/AlGaN/GaN based metal–insulator–semiconductor structures

Microscopic Observation of Lateral and Vertical Charge Transportation in Si Nanocrystals Sandwiched by Amorphous SiC Layers

Electronic Properties and Charge Storage Effect of Amorphous SiN Passivated Nanocrystalline Silicon

Nanoscale Quantification of Charge Injection and Transportation Process in Si-nanocrystal Based Sandwiched Structure.

Charge Storage and Light Emission Properties of Three Dimension Controllable Si Nanostructures

Electron and hole charging effect of nanocrystalline silicon in double-oxide barrier structure

Electronic Properties of Nanocrystalline-Si Embedded in Asymmetric Ultrathin Sio2 by In-Situ Fabrication Technique