Abstract:Silicon photoluminescence and lasing have been issues critical to breaking through bottlenecks in the understanding of luminescence mechanisms. Unfortunately, long-standing disputes about the exciton recombination mechanism and fluorescence lifetime remain unresolved, especially about whether silicon nanocrystals (Si NCs) can realize fast direct band gap-like optical transitions. Here, using ground-state and excited-state density functional theory (DFT), we obtained intrinsic phonon-free optical transitions at sizes from Si22 to Si705, showing that very small Si NCs can realize a strong direct optical transition. Orbital labeling results show that this rapid transition does not come from the T-T-like transition, contrary to the conclusions from the effective mass approximation, and that T-X mixing leads to a quasidirect band gap. This anomalous transition is particularly intense with decreasing size (or enhancement of quantum confinement). By investigating electron and hole distributions generated in the optical transition, localized state induced enhanced emission (LIEE) in Si NCs was proposed. Quantum confinement distorts the excited-state electron spatial distribution by localizing Bloch waves into the NC core, resulting in increased hole and electron overlap, thus inducing a fast optical process. This work resolves important debates and proposes LIEE to explain the anomalous luminescence-a phase transition from weak (or no) luminescent state to strong optical transition, which will aid attempts at realizing high radiative rate NC materials and application-level Si lasers.

Charge Storage and Light Emission Properties of Three Dimension Controllable Si Nanostructures

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Charge Storage and Electron/light Emission Properties of Silicon Nanocrystals

Light Emitting Devices Based on Nanocrystalline-Silicon Multilayer Structure

Electronic Properties and Charge Storage Effect of Amorphous SiN Passivated Nanocrystalline Silicon

Localized Surface Plasmon Resonance Enhanced Photoluminescence from SiNx with Different N/Si Ratios

Charge Storage in Si-nanocrystals Embedded NOS Structure Characterized by Kelvin Probe Force Microscopy

The Charge Storage of the Nc-Si Layer

Double-level Charge Storage in Self-Aligned Doubly-Stacked Si Nanocrystals in SiN X Dielectric

Characteristics and Charge Storage of Silicon Quantum Dots Embedded in Silicon Nitride Film

Resonant Tunnelling and Storage of Electrons in Si Nanocrystals Within A-Sin X /Nc-Si/a-sin X Structures

The Periodicity Effect on the Charge Storage Characteristic of Multistacked Nc-Si Floating Gate.

Formation and properties of high density Si nanodots

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

Tunnelling and Storage of Charges in A-Sinx/Nc-Si/A-Sinx Structures

Microscopic Observation of Lateral and Vertical Charge Transportation in Si Nanocrystals Sandwiched by Amorphous SiC Layers

Formation and Charging Effect of Si Nanocrystals in A-Sinx/a-si/a-sinx Structures

Fabrication and Luminescence Properties of Si Quantum Dots Based on Si-Rich Sinx/N-Rich Siny Multilayer

Enhancement of Intrinsic Optical Transitions in Silicon Nanocrystals by State Localization

Formation of a Single-Layer Si Nanostructure and Its Luminescence Characteristics