Abstract:Amorphous-Si∶H/SiO2 multilayers with various sub-layer thicknesses were layer-by-layer deposited and in situ plasma oxidized in a plasma-enhanced chemical vapor deposition system. Nano-crystalline Si can be formed in the initial a-Si sub-layers based on the constrained crystallization principal. Raman scattering and TEM measurements were used to characterize the structure of multilayers during the formation of nc-Si/SiO2 multilayers. It was found that the annealing temperature and the a-Si∶H sub-layer thickness influence on the crystallization process obviously. Photoluminescence was observed at room temperature and the PL peak position is about 750 nm. Light-emitting Diode with MOS (Metal-Oxide-Semiconductor) structure was designed and fabricated by evaporating Al electrodes on both the upper and the bottom surface of the sample. Electroluminescence at room temperature was also observed by the naked eye with the turn-on voltage of 6 V. The EL spectra contain two luminescence bands located at 520 nm and 650 nm, respectively. The influence of nc-Si and interface of nc-Si and SiO2 on the luminescent character of the device was briefly discussed.

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

Light Emitting Devices Based on Nanocrystalline-Silicon Multilayer Structure

Electrically Driven Luminescence of Nanocrystalline Si/SiO2 Multilayers on Various Substrates

Interface State-Related Linear and Nonlinear Optical Properties of Nanocrystalline Si/SiO2 Multilayers

Photoluminescence During the Crystallization of A-Si∶h/sio2 Multilayers

Correlation Between Light Emissions from Amorphous-Si：H/SiO2 and Nc-Si/sio2 Multilayers

NcSi/SiO2 Multilayer Prepared by the Method of Laser Constrained Crystallization

Correlation Between Light Emissions From Amorphous-Si : H/Sio2 And Nc-Si/Sio2 Multilayers

The Fabrication of Nc-Si/Sio2 Multilayers and Blue-Light Emission

Comparative Study of Electroluminescence from Annealed Amorphous Sic Single Layer and Amorphous Si/Sic Multilayers

Formation of a Single-Layer Si Nanostructure and Its Luminescence Characteristics

Structural and Electroluminescent Properties of Si Quantum Dots/sic Multilayers

The Evolution Investigation Of Photoluminescence From A-Si : H/Sio2 To Nc-Si/Sio2 Multilayers

Electro-Luminescence from Un-Doped and Doped Nanocrystalline Si/Sio2 Multilayers

Characteristics of Luminescent Nc-Si/sio 2 Multilayers and the Influence of Annealing in Hydrogen

Microstructure properties of nanocrystalline silicon/SiO2 multilayers fabricated by laser-induced crystallization

Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO<sub>2</sub> multilayers

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Intermediate Phase Silicon Structure Induced Enhancement of Photoluminescence from Thermal Annealed A-Si/Sio2 Multilayers

Interface Confinement And Local Structure In Nc-Si/A-Sinx Multilayers (Nc Equivalent To Nanocrystalline, A Equivalent To Amorphous)