Abstract:We report a new method of preparing patterned nano-crystalline Si (nc-Si) by pulsed laser interference crystallization of a- Si:H thin films. A KrF excimer pulsed laser with wavelength 248 nm and pulse duration 30 ns is employed as a coherent ultra-violet beam source; a one-/two-dimensional (1D/2D) silica phase-shifting grating is used to form a high-contrast laser interference pattern behind it. During the laser treatment, the a-Si:H film is placed behind near contact with the phase grating. A transient thermal 1D/2D grid is then directly formed on the sample, leading to the local crystallization of the a-Si:H films and forming of nano- crystalline Si. The crystallinity of nc-Si films is verified by Raman scattering. Atomic force microscopy clearly shows a morphology of 1D/2D regular sub-micron patterns formed by locally crystallized stripes/dots, which are composed of densely gathered crystallites with a lateral size of approximately 50 - 100 nm and a height of approximately 10 - 20 nm. The interfaces between the crystallized and the amorphous zones are abrupt. Transmission electron micropsy demonstrates a lateral size distribution of nc-Si within the crystallized zones. This new approach has a potential application in the nano-electronics and nano-optoelectronics.

NcSi/SiO2 Multilayer Prepared by the Method of Laser Constrained Crystallization

Microstructure properties of nanocrystalline silicon/SiO2 multilayers fabricated by laser-induced crystallization

Control of size and shape of ncSi in aSiN x /aSi:H multilayers by laser induced constrained crystallization

Three-dimensional ordered nano-crystalline Si made by pulsed laser interference crystallization of a-Si:H/a-SiNx:H multilayers

Step-by-Step Laser Crystallization of Amorphous Si:H/SiN X :H Multilayer for Active Layer in Microcavities

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

Formation of the Patterned Nanocrystalline Si by Pulsed-Laser Interference Crystallization of A-Si:H Thin Films

Photoluminescence During the Crystallization of A-Si∶h/sio2 Multilayers

Patterned Structures of Silicon Nanocrystals Prepared by Pulsed Laser Interference Crystallization of Ultra-Thin A-Si : H Single-Layer

Two-Dimensional Patterned Nc-Si Arrays Prepared by the Method of Laser Interference Crystallization

Patterned Distribution Of Silicon Nanocrystals Prepared By Pulsed Laser Interference Crystallization Of An Ultrathin A-Si : H Single Layer

Microstructures of Patterned Nc-Si Superlattices Made by Pulsed Laser Interference Crystallization

AFM and HREM observation of the pulse laser interference crystallized a-Si:H/a-SiNx:H multilayers

AFM and HREM Observation of the Pulse Laser Interference Crystallized a--Si:H/a-SiN<sub>x</sub>:H Multilayers

Two-Dimensional Patterned Nanocrystalline Si Array Prepared by Laser Interference Crystallization of Ultra-Thin Amorphous Si : H Single-Layer

Surface Morphology And Structural Observation Of Laser Interference Crystallized A-Si : H/A-Sinx : H Multilayers

Two-dimensional patterned nc-Si arrays in nanometer thick a-Si:H single layer

Fabrication of the Three-dimensional Ordered Nc-Si Array Made by Pulsed Laser Interference Crystallization

Formation of two- Or three-dimentional patterned structures of silicon nanocrystals

Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method

The Effect Of Laser Crystallization On The Carrier Transport And Electroluminescence From Nanocrystalline Si/Sio2 Multilayers