Abstract:We report a new method of preparing patterned nano-crystalline Si (nc-Si) by pulsed laser interference crystallization of a- Si:H thin films. A KrF excimer pulsed laser with wavelength 248 nm and pulse duration 30 ns is employed as a coherent ultra-violet beam source; a one-/two-dimensional (1D/2D) silica phase-shifting grating is used to form a high-contrast laser interference pattern behind it. During the laser treatment, the a-Si:H film is placed behind near contact with the phase grating. A transient thermal 1D/2D grid is then directly formed on the sample, leading to the local crystallization of the a-Si:H films and forming of nano- crystalline Si. The crystallinity of nc-Si films is verified by Raman scattering. Atomic force microscopy clearly shows a morphology of 1D/2D regular sub-micron patterns formed by locally crystallized stripes/dots, which are composed of densely gathered crystallites with a lateral size of approximately 50 - 100 nm and a height of approximately 10 - 20 nm. The interfaces between the crystallized and the amorphous zones are abrupt. Transmission electron micropsy demonstrates a lateral size distribution of nc-Si within the crystallized zones. This new approach has a potential application in the nano-electronics and nano-optoelectronics.

Two-Dimensional Patterned Nanocrystalline Si Array Prepared by Laser Interference Crystallization of Ultra-Thin Amorphous Si : H Single-Layer

Patterned Structures of Silicon Nanocrystals Prepared by Pulsed Laser Interference Crystallization of Ultra-Thin A-Si : H Single-Layer

Two-Dimensional Patterned Nc-Si Arrays Prepared by the Method of Laser Interference Crystallization

Patterned Distribution Of Silicon Nanocrystals Prepared By Pulsed Laser Interference Crystallization Of An Ultrathin A-Si : H Single Layer

Two-dimensional patterned nc-Si arrays in nanometer thick a-Si:H single layer

Formation of the Patterned Nanocrystalline Si by Pulsed-Laser Interference Crystallization of A-Si:H Thin Films

Three-dimensional ordered nano-crystalline Si made by pulsed laser interference crystallization of a-Si:H/a-SiNx:H multilayers

Formation of two- Or three-dimentional patterned structures of silicon nanocrystals

One-Dimensional Periodic Nanocrystalline Silicon Arrays Made by Pulsed Laser Interference Crystallization

Microstructures of Patterned Nc-Si Superlattices Made by Pulsed Laser Interference Crystallization

Formation of a Dense Nanocrystalline Si Array on an Insulating Layer by Laser Irradiation of Ultrathin Amorphous Si Films

Fabrication of the Three-dimensional Ordered Nc-Si Array Made by Pulsed Laser Interference Crystallization

Fabrication and Characterization of the Size-Controlled and Patterned Nc-Si Dots

Patterned structures of silicon nanocrystals prepared by laser annealing

An approach to obtain single layer of nanostructured Si by laser irradiation on ultrathin amorphous Si films

Light Intensity Distribution in Laser Interference Crystallization and the Fabrication of Two-Dimensional Periodic Nanocrystalline Silicon Array

The Constrained Growth and Patterned Distribution of Nc-Si from A-Sinx/a-si:H/a-sinx: Mechanism and Experiments

AFM and HREM Observation of the Pulse Laser Interference Crystallized a--Si:H/a-SiN<sub>x</sub>:H Multilayers

AFM and HREM observation of the pulse laser interference crystallized a-Si:H/a-SiNx:H multilayers

Microstructure properties of nanocrystalline silicon/SiO2 multilayers fabricated by laser-induced crystallization

One-dimensional, Self-Organized Si Dots Grown by Pulsed Laser Melting of A-Si:H Films