Abstract:In this study, silicon micro/nanostructures of controlled size and shape are fabricated by chemical-etching-assisted femtosecond laser single-pulse irradiation, which is a flexible, high-throughput method. The pulse fluence is altered to create various laser printing patterns for the etching mask, resulting in the sequential evolution of three distinct surface micro/nanostructures, namely, ring-like microstructures, flat-top pillar microstructures, and spike nanostructures. The characterized diameter of micro/nanostructures reveals that they can be flexibly tuned from the micrometer (∼2 μm) to nanometer (∼313 nm) scales by varying the laser pulse fluence in a wide range. Micro-Raman spectroscopy and transmission electron microscopy are utilized to demonstrate that the phase state changes from single-crystalline silicon (c-Si) to amorphous silicon (a-Si) after single-pulse femtosecond laser irradiation. This amorphous layer with a lower etching rate then acts as a mask in the wet etching process. Meanwhile, the on-the-fly punching technique enables the efficient fabrication of large-area patterned surfaces on the centimeter scale. This study presents a highly efficient method of controllably manufacturing silicon micro/nanostructures with different single-pulse patterns, which has promising applications in the photonic, solar cell, and sensors fields.

Fabrication and Characterization of the Size-Controlled and Patterned Nc-Si Dots

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Patterned Structures of Silicon Nanocrystals Prepared by Pulsed Laser Interference Crystallization of Ultra-Thin A-Si : H Single-Layer

Formation of the Patterned Nanocrystalline Si by Pulsed-Laser Interference Crystallization of A-Si:H Thin Films

Microstructures of Patterned Nc-Si Superlattices Made by Pulsed Laser Interference Crystallization

Two-Dimensional Patterned Nanocrystalline Si Array Prepared by Laser Interference Crystallization of Ultra-Thin Amorphous Si : H Single-Layer

Two-Dimensional Patterned Nc-Si Arrays Prepared by the Method of Laser Interference Crystallization

The Constrained Growth and Patterned Distribution of Nc-Si from A-Sinx/a-si:H/a-sinx: Mechanism and Experiments

Two-dimensional patterned nc-Si arrays in nanometer thick a-Si:H single layer

Formation of two- Or three-dimentional patterned structures of silicon nanocrystals

Patterned Distribution Of Silicon Nanocrystals Prepared By Pulsed Laser Interference Crystallization Of An Ultrathin A-Si : H Single Layer

Fabrication of the Three-dimensional Ordered Nc-Si Array Made by Pulsed Laser Interference Crystallization

Control of size and shape of ncSi in aSiN x /aSi:H multilayers by laser induced constrained crystallization

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

One-dimensional, Self-Organized Si Dots Grown by Pulsed Laser Melting of A-Si:H Films

Three-Dimensional Ordered Nano-Crystalline Si Made by Pulsed Laser Interference Crystallization of A-Si : H/A-Sinx : H Multilayers

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

The Formation of High-Density Uniform Silicon Nanocrystals on Insulator Substrate and Their Surface Morphology

Patterned structures of silicon nanocrystals prepared by laser annealing

High Density Si Nanodots-Fabrication and Properties

Controllable Si (100) Micro/nanostructures by Chemical-Etching-assisted Femtosecond Laser Single-Pulse Irradiation