Abstract:The preparation and characteristics of silicon nanoarrays is now an attractive areas of research. At present,most research focused on the optical and electrical properties and applications,and less field emission characteristics,as a mature technology of silicon planar support, silicon field emission cathode materials are easily compatible with the microelectronic integrated circuits, and so they have a broad application prospects.We present the fabrication of large-scale two dimensional periodic silicon nanoarrays using nanosphere lithography,and the field emission characteristics have been studied. The fabrication process includes following steps: first the crystalline silicon substrate was coated with a monolayer of self polystyrene (PS) spheres of 220 nm in diameter, then the sample was etched by reactive ion etching to produce silicon nanoarrays. AFM images of the nanoarrays show that the tips stand 60～70 nm high and the area density can achieve 6×109/cm2. All field emission measurements were performed at a vacuum of 1.0×10-4 Pa or better. Expected to improve the field emission characteristics, about 60 nm thickness of a amorphous carbon film was deposited on top of the silicon nanoarrays by plasma-enhanced chemical vapour deposition. Field emission results show that compared to silicon nanoarrays, silicon nanoarrays coated with a thin a-C film effectively lower the threshold fields, approximately 8.1 V/μm, while field enhancement factor increased. When the electric field intensity reached 20 V/μm, the current density can reach about 1.4 mA/cm2. The improvement of field emission originates from the anisotropic structure of the films,when conductive sp2 clusters embedded in an insulating sp3 matrix,the electric field has been enhanced.

High Density Si Nanodots-Fabrication and Properties

An approach to obtain single layer of nanostructured Si by laser irradiation on ultrathin amorphous Si films

Formation and properties of high density Si nanodots

Visible Light Emission From Single Layer Si Nanodots Fabricated By Laser Irradiation Method

Formation of a Dense Nanocrystalline Si Array on an Insulating Layer by Laser Irradiation of Ultrathin Amorphous Si Films

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Laser Induced Surface Nanostructuring on Ultra-Thin Amorphous Si Films

Enhanced Electron Field Emission from Dense Si Nano-Dots Prepared by Laser Crystallization of Ultrathin Amorphous Si Films

Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method

Fabrication and Characterization of the Size-Controlled and Patterned Nc-Si Dots

The Formation of High-Density Uniform Silicon Nanocrystals on Insulator Substrate and Their Surface Morphology

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Formation of a Single-Layer Si Nanostructure and Its Luminescence Characteristics

Two-Dimensional Patterned Nanocrystalline Si Array Prepared by Laser Interference Crystallization of Ultra-Thin Amorphous Si : H Single-Layer

Electron Field Emission Characteristics from Single-crystal Silicon Nanoarrays Fabricated by Direct Lithography with Nanosphere Mask

One-dimensional, Self-Organized Si Dots Grown by Pulsed Laser Melting of A-Si:H Films

Formation and Field Emission Characteristics of Amorphous and Crystalline Si Nanoarrays

Patterned Structures of Silicon Nanocrystals Prepared by Pulsed Laser Interference Crystallization of Ultra-Thin A-Si : H Single-Layer

Electron Field Emission of Nanocrystalline Si Prepared by Laser Crystallization

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Formation of the Patterned Nanocrystalline Si by Pulsed-Laser Interference Crystallization of A-Si:H Thin Films