Abstract:Dense arrays of high aspect ratio Si micro-pyramids have been formed by cumulative high intensity laser irradiation of doped Si wafers in an SF6 environment. A comparative study using nanosecond (XeCl, 308 nm) and femtosecond (Ti: Sapphire, 800 nm and KrF, 248 nm) laser pulses has been performed in this work. The influence of pulse duration and ambient gas pressure (SF6) is also presented. Scanning electron microscopy has shown that upon laser irradiation conical features appear on the Si surface in a rather homogenous distribution and with a spontaneous self alignment into arrays. Their lowest tip diameter is 800 nm; while their height reaches up to 90 μm. Secondary tip decoration appears on the surface of the formed spikes. Areas of 2×2 mm2 covered with Si cones have been tested as cold cathode field emitters. After several conditioning cycles, the field emission threshold for the studied Si tips is as low as 2 V/μm, with an emission current of 10−3 A/cm2 at 4 V/μm. Even though these structures have smaller aspect ratios than good quality carbon nanotubes, their field emission properties are similar. The simple and direct formation of field emission Si arrays over small pre-selected areas by laser irradiation could lead to a novel approach for the development of electron sources.

Formation of a Dense Nanocrystalline Si Array on an Insulating Layer by Laser Irradiation of Ultrathin Amorphous Si Films

An approach to obtain single layer of nanostructured Si by laser irradiation on ultrathin amorphous Si films

Laser Induced Surface Nanostructuring on Ultra-Thin Amorphous Si Films

Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method

Two-Dimensional Patterned Nanocrystalline Si Array Prepared by Laser Interference Crystallization of Ultra-Thin Amorphous Si : H Single-Layer

High Density Si Nanodots-Fabrication and Properties

Formation of the Patterned Nanocrystalline Si by Pulsed-Laser Interference Crystallization of A-Si:H Thin Films

The Formation of High-Density Uniform Silicon Nanocrystals on Insulator Substrate and Their Surface Morphology

Patterned Structures of Silicon Nanocrystals Prepared by Pulsed Laser Interference Crystallization of Ultra-Thin A-Si : H Single-Layer

Three-Dimensional Ordered Nano-Crystalline Si Made by Pulsed Laser Interference Crystallization of A-Si : H/A-Sinx : H Multilayers

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Patterned Distribution Of Silicon Nanocrystals Prepared By Pulsed Laser Interference Crystallization Of An Ultrathin A-Si : H Single Layer

Microstructure properties of nanocrystalline silicon/SiO2 multilayers fabricated by laser-induced crystallization

One-Dimensional Periodic Nanocrystalline Silicon Arrays Made by Pulsed Laser Interference Crystallization

Patterned structures of silicon nanocrystals prepared by laser annealing

Two-Dimensional Patterned Nc-Si Arrays Prepared by the Method of Laser Interference Crystallization

Nanocrystalline silicon films prepared by laser-induced crystallization

Molecular Dynamics Simulations of Pulsed Laser Crystallization of Amorphous Silicon Ultrathin Films

KrF Laser-Induced Nanometer Si Crystallites Formation and Tem Observation

Two-dimensional patterned nc-Si arrays in nanometer thick a-Si:H single layer

Fabrication of the Three-dimensional Ordered Nc-Si Array Made by Pulsed Laser Interference Crystallization