An approach to obtain single layer of nanostructured Si by laser irradiation on ultrathin amorphous Si films

Jun Xu,Zanhong Cen,Jiang Zhou,Wei Li,XinFan Huang,Kunji Chen
2007-01-01
Abstract:An approach to achieve single layer of nanostructured Si array on insulating layer with high density was proposed and demonstrated. It was found that a single layer of nanocrystalline Si array can be formed by using KrF pulsed excimer laser irradiation on ultrathin hydrogenated amorphous silicon films (4-30nm) followed by thermal annealing. Under the suitable fabrication conditions, the areal density of formed nanocrystalline Si is as high as 10(11)cm(-2) and the lateral size is around 10nm while the height is about 2-4 nm. Visible light emission was observed from the Si nanostructures at room temperature and the luminescence peak is varied from 660 to 725 nm with increasing the amorphous Si film thickness. The variable luminescence can be attributed to the interface state assisted radiative recombination rather than the quantum size effect.
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