Abstract:A new process to crystallize amorphous silicon without melting and the generation of excessive heating of nearby components is presented. We propose the addition of a molybdenum layer to improve the quality of the laser-induced crystallization over that achieved by direct irradiation of silicon alone. The advantages are that it allows the control of crystallite size by varying the applied fluence of a near-infrared femtosecond laser. It offers two fluence regimes for nanocrystallization and polycrystallization with small and large crystallite sizes, respectively. The high repetition rate of the compact femtosecond laser source enables high-quality crystallization over large areas. In this proposed method, a multilayer structure is irradiated with a single femtosecond laser pulse. The multilayer structure includes a substrate, a target amorphous Si layer coated with an additional molybdenum thin film. The Si layer is crystallized by irradiating the Mo layer at different fluence regimes. The transfer of energy from the irradiated Mo layer to the Si film causes the crystallization of amorphous Si at low temperatures (∼700 K). Numerical simulations were carried out to estimate the electron and lattice temperatures for different fluence regimes using a two-temperature model. The roles of direct phonon transport and inelastic electron scattering at the Mo-Si interface were considered in the transfer of energy from the Mo to the Si film. The simulations confirm the experimental evidence that amorphous Si was crystallized in an all-solid-state process at temperatures lower than the melting point of Si, which is consistent with the results from transmission electron microscopy (TEM) and Raman. The formation of crystallized Si with controlled crystallite size after laser treatment can lead to longer mean free paths for carriers and increased electrical conductivity.

Step-by-Step Laser Crystallization of Amorphous Si:H/SiN X :H Multilayer for Active Layer in Microcavities

Three-dimensional ordered nano-crystalline Si made by pulsed laser interference crystallization of a-Si:H/a-SiNx:H multilayers

NcSi/SiO2 Multilayer Prepared by the Method of Laser Constrained Crystallization

Microstructure properties of nanocrystalline silicon/SiO2 multilayers fabricated by laser-induced crystallization

Photoluminescence During the Crystallization of A-Si∶h/sio2 Multilayers

Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method

Formation of the Patterned Nanocrystalline Si by Pulsed-Laser Interference Crystallization of A-Si:H Thin Films

Patterned structures of silicon nanocrystals prepared by laser annealing

Control of size and shape of ncSi in aSiN x /aSi:H multilayers by laser induced constrained crystallization

Two-Dimensional Patterned Nanocrystalline Si Array Prepared by Laser Interference Crystallization of Ultra-Thin Amorphous Si : H Single-Layer

Visible Photo- and Electro-Luminescence from Laser-Crystallized A-Si:H and Its Based Multilayers

AFM and HREM observation of the pulse laser interference crystallized a-Si:H/a-SiNx:H multilayers

Surface Morphology And Structural Observation Of Laser Interference Crystallized A-Si : H/A-Sinx : H Multilayers

AFM and HREM Observation of the Pulse Laser Interference Crystallized a--Si:H/a-SiN<sub>x</sub>:H Multilayers

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Microstructures of Patterned Nc-Si Superlattices Made by Pulsed Laser Interference Crystallization

The Effect Of Laser Crystallization On The Carrier Transport And Electroluminescence From Nanocrystalline Si/Sio2 Multilayers

Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer

Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

Visible photoluminescence in crystallized amorphous Si:H/SiN<i>x</i>:H multiquantum-well structures

Two-Dimensional Patterned Nc-Si Arrays Prepared by the Method of Laser Interference Crystallization