Abstract:The intense visible photoluminescence (PL) of porous Si has attracted much interest as it opens up the possibility of fabricating light-emitting devices based on silicon technology. The effect was attributed to a quantum confinement of carriers in structures only a few nm in size, resulting in an effective increase of the apparent band-gap with respect to bulk Si. Recent years, it had been widely reported about Si and Ge nano particles embedded in SiO_2 and Si_3N_4 films, some interesting phenomenon were also reported. Since the successful synthesis of amorphous semiconductor multiple films used plasma enhanced chemical vapour deposition (PECVD) by Exxon Corporation, the technology which need little complex epitaxy has attracted much attention, as we all known, the multiple films has a strong quantum effect, and also some interface effect would be magnified compared to the single layer films, it brings some novel phenomenon. The low temperature or room temperature photoluminescence had been widely reported, and they mostly concerned about the quantum effect and interface structure, but the photoluminescence dynamics of the multiple semiconductor films had not been reported. In this paper, we have performed multiple a-SiC_x∶H/a-Si∶H films successfully by PECVD. Microstructure and time-resolved PL spectra of the samples were studied. The results showed that a significant photoluminescence peak at about 650 nm was observed, and the peak position varies with annealing temperature. A maximum intensity of PL peak and a minimum decay time (t_1) were obtained for the sample annealed at 900 ℃. The origin of luminescence was suggested and discussed.

Photoluminescence During the Crystallization of A-Si∶h/sio2 Multilayers

Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Contribution of Multiple Emitting Centers to Luminescence from Si/SiO2 Multilayers with Step by Step Thermal Annealing

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

Photoluminescence from A-Si : H/Sio2 Multilayers Fabricated Using in Situ Layer by Layer Plasma Oxidation

Intermediate Phase Silicon Structure Induced Enhancement of Photoluminescence from Thermal Annealed A-Si/Sio2 Multilayers

The Evolution Investigation Of Photoluminescence From A-Si : H/Sio2 To Nc-Si/Sio2 Multilayers

Characteristics of Luminescent Nc-Si/sio 2 Multilayers and the Influence of Annealing in Hydrogen

NcSi/SiO2 Multilayer Prepared by the Method of Laser Constrained Crystallization

Enhanced Green to Red Photoluminescence in Thermally Annealed of Amorphous-Si:H/sio2 Multilayers

Step-by-Step Laser Crystallization of Amorphous Si:H/SiN X :H Multilayer for Active Layer in Microcavities

Visible Photo- and Electro-Luminescence from Laser-Crystallized A-Si:H and Its Based Multilayers

Thermal Annealing of A-Si : H/A-Sinx : H Multilayers

Time Resolution Photoluminescence of A-Sicx:H/nc-si:h Multi-layers at Room Temperature

Preparation and Time Resolution Photoluminescence of Α-Sicx:H/nc-si:h Multi-Layers at Room Temperature

The Effect Of Thermal Annealing On Crystallization In A-Si : H/Sio2 Multilayers By Using Layer By Layer Plasma Oxidation

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Visible Photoluminescence in Crystallized Amorphous Sih/Sinxh Multiquantum-Well Structures

Visible photoluminescence in crystallized amorphous Si:H/SiN<i>x</i>:H multiquantum-well structures

A detailed photoluminescence study of crystallized a-Si:H multiquantum-well structures