Characteristics of Luminescent Nc-Si/sio 2 Multilayers and the Influence of Annealing in Hydrogen

Zhengyue Xia,Han Pei-Gao,Wei De-Yuan,Deyuan Chen,Xu Jun,Zhongyuan Ma,Xinfan Huang,Kunji Chen

DOI: https://doi.org/10.7498/aps.56.6691

IF: 0.906

2007-01-01

Acta Physica Sinica

Abstract:Plasma enhanced chemical vapor deposition (PECVD) was used to prepare a-Si:H/SiO 2 multilayers. Two-step thermal annealing was then used to transform them into nc-Si/SiO 2 multilayers. The size of formed nc-Si (about 4nm) can be controlled and room temperature visible photoluminescence was observed from the annealed samples with the peak located at 750nm. Moreover, we found that annealing in hydrogen can enhance the PL intensity of the materials. The electron paramagnetism resonance (EPR) suggested that annealing in hydrogen atmospheye effectively reduces the nonradiative recombination sites existing in the nc-Si and results in the enhancement of the luminescence efficiency.