Abstract:Silicon-rich silicon nitride (SiNx) thin films are deposited at 220 ℃ on n-type monocrystalline silicon substrates by plasma enhanced chemical vapor deposition using NH3 and SiH4 as the reaction gases. The samples are annealed at temperature in a range of 500-1100 ℃ in N2 atmosphere. We analyze the crystalline states of silicon quantum dots (Si-QDs) and calculate the crystalline ratios of samples under different annealing conditions according to the Raman spectra. The crystalline ratio is less than 18% when the annealing temperature is lower than 950 ℃, when the temperature reaches 1100 ℃, the crystalline ratio is increased to 53%, which indicates that most of the Si-QDs have been converted into crystallines. Fourier transform infrared spectra are measured at room temperature to investigate the evolutions of the bonding structures within the SiN_x matrix. We find that the wavelengths of Si-N and Si-H bond shift toward higher wavelength, which manifests the formation of near stoichiometric silicon nitride. Photoluminescence generated from all samples is investigated in detail. We find five luminescence peaks, whose origins are analyzed. We conclude that the obvious green luminescence (centred at 500-550 nm) oringinates from Si-QDs and the others come from different defects in the films. The effects of sizes and distribution of Si-QDs on the shift of the luminescence peak are discussed. We acquire that the sizes of Si-QDs are in a rang from 1.6 nm to 3 nm, which have an obvious confinement effect. These results are useful for fabricating contronllable Si-QDs and achievement of luminescent devices based on Si-QDs.

Influence of hydrogen passivation on the luminescence of Si quantum dots embedded in Si3Nx

Enhanced Luminescence from Si Quantum Dots/sio2 Multilayers by Hydrogen Annealing

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Annealing and excitation dependent photoluminescence of silicon rich silicon nitride films with silicon quantum dots

Effect of annealing on photoluminescence of passivated porous silicon

Identification and control of the origin of photoluminescence from silicon quantum dots

Enhancement and Stability of Photoluminescence from Si Nanocrystals Embedded in A Sio2 Matrix by H-2-Passivation

Photoluminescence Enhancement of Si Nanocrystals Embedded in SiO 2 by Thermal Annealing in Air

Light Emission from Si Nanoclusters Formed at Low Temperatures

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

The influence of annealing temperature on the synthesis of silicon quantum dots embedded in hydrogenated amorphous Si-rich silicon carbide matrix

Optical Properties of High Photoluminescence Silicon Nanocrystals Embedded in SiO2 Matrices Obtained by Annealing Hydrogen Silsesquioxane

The effects of annealing temperature on photoluminescence of silicon nanoparticles embedded in SiNx matrix

Structural Evolution And Photoluminescence Of Annealed Si-Rich Nitride With Si Quantum Dots Prepared By Plasma Enhanced Chemical Vapor Deposition

Photoluminescences and Structrue Performances of Si-Rich Silicon Nitride Thin Films Containing Si Quantum Dots

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Controlling the Red Luminescence from Silicon Quantum Dots in Hydrogenated Amorphous Silicon Nitride Films

Characteristics of Luminescent Nc-Si/sio 2 Multilayers and the Influence of Annealing in Hydrogen

Influence of Annealing Treatments on the Photoluminescence Properties of A-Sinx: H Films

Synthesis and Optical Properties of Si-Rich Nitride Containing Silicon Quantum Dots

Effects of hydrogen plasma annealing on the luminescence from a-Si:H/SiO2 and nc-Si/SiO2 multilayers