Abstract:Though photoluminescence (PL) of Si quantum dots (QDs) has been known for decades and both theoretical and experimental studies have been extensive, their luminescence mechanism has not been elaborated. Several models have been proposed to explain the mechanism. A deep insight into the origin of light emissions in Si QDs is necessary. This work calculated the ground- and excited state properties of hydrogenated Si QDs with various diameters, including full hydrogen passivation, single Si Created by potrace 1.16, written by Peter Selinger 2001-2019 O ligands, single epoxide and coexisting SiO and epoxide structures in order to investigate the dominant contribution states for luminescence. The results revealed that even a single oxygen atom in hydrogenated Si QDs can dramatically change their electronic and optical properties. Intriguingly, we found that a size-independent emission, the strongest among all possible emissions, was induced by the single SiO passivated Si-QDs. In non-oxidized Si-QDs exhibiting a core-related size-tunable emission, the luminescence properties can be modulated by the ligands of Si QDs, and a very small number of oxygen ligands can strongly influence the luminescence of nanocrystalline silicon. Our findings deepen the understanding of the PL mechanism of Si QDs and can further promote the development of silicon-based optoelectronic devices.

Enhanced Luminescence from Si Quantum Dots/sio2 Multilayers by Hydrogen Annealing

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Influence of hydrogen passivation on the luminescence of Si quantum dots embedded in Si3Nx

Characteristics of Luminescent Nc-Si/sio 2 Multilayers and the Influence of Annealing in Hydrogen

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Structural and Electroluminescent Properties of Si Quantum Dots/sic Multilayers

Controlling the Red Luminescence from Silicon Quantum Dots in Hydrogenated Amorphous Silicon Nitride Films

Optical Properties of High Photoluminescence Silicon Nanocrystals Embedded in SiO2 Matrices Obtained by Annealing Hydrogen Silsesquioxane

Hydrogen-Induced Recovery Of Photoluminescence From Annealed A-Si : H/A-Sio2 Multilayers

Luminescence Mechanism in Hydrogenated Silicon Quantum Dots with a Single Oxygen Ligand

Enhanced Electroluminescence from Si Quantum Dots-Based Light-Emitting Devices with Si Nanowire Structures and Hydrogen Passivation

Enhanced Green to Red Photoluminescence in Thermally Annealed of Amorphous-Si:H/sio2 Multilayers

Contribution of Multiple Emitting Centers to Luminescence from Si/SiO2 Multilayers with Step by Step Thermal Annealing

A Luminescent Si Quantum Dots Films - Preparation And Characterization

Identification and control of the origin of photoluminescence from silicon quantum dots

Enhancement of Room Temperature Dislocation-Related Photoluminescence of Electron Irradiated Silicon

The effect of annealing and photoactivation on the optical transitions of band-band and surface trap states of colloidal quantum dots in PMMA.

Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon

Optimum Quantum Yield of the Light Emission from 2 to 10 Nm Hydrosilylated Silicon Quantum Dots

Light Emission from Si Nanoclusters Formed at Low Temperatures

Plasmon-Enhanced Surface-State Emission of CdSe Quantum Dots and Its Application to Microscale Luminescence Patterns